Seagate Technology Incorporated

Other

David James Larson

Eric Walter Singleton

Declan Macken

Mai Ghaly

Steven B Slade

Kristin Joy Duxstad

Patrick John Moran

Dimitar Velikov Dimitrov

Michael C Kautzky

Song Sheng Xue

Paul E Anderson

Kurt W Wierman

Brian William Karr

Eric Leroy Granstrom

Brenda Anne Everitt

Michael Kevin Minor

Christopher Loren Platt

James Kent Howard

Bradley Hugh Miller

Daniel J Dummer

Peter Hampden Clifton

A magnetic sensor having adjustable electrical dimensions, such as electrical read width and electrical stripe height, is disclosed. The magnetic sensor includes a sensor stack with one or more bias electrodes positioned with respect to the sensor stack. The electrical width or electrical stripe height of the sensor stack is a function of a voltage applied to the bias electrodes. The electric field produced by the bias electrodes alters the electrical profile of the magnetoresistive device.

Magnetic sensor with electrically defined active area dimensions

A tunneling magnetoresistive stack includes a first ferromagnetic layer, a tunnel barrier layer on the first ferromagnetic layer, and a second ferromagnetic layer on the tunnel barrier layer. The tunneling magnetoresistive stack exhibits a negative exchange coupling between the first ferromagnetic layer and the second ferromagnetic layer indicating that the tunneling magnetoresistive stack has a high quality tunnel barrier layer.

TMR sensor with oxidized alloy barrier layer and method for forming the same

The magnetoresistive sensor has an MR stack and side shields formed by contacts and/or pedestals on either side of the MR stack. The materials for the contacts and pedestals are selected to be magnetically soft, electrically conductive and have a low AMR signal. The contacts and pedestals are magnetically decoupled from the hard bias materials by placement of spacers.

Side shielded current in plane spin-valve

A magnetoresistive sensor having an MR stack biased by high anisotropy hard bias elements thereby reducing distortion in sensor operation and improving head to head operational values. The high anisotropy hard bias elements are formed from a hard magnetic material deposited in a thin film having a substantially axial preferred direction of magnetic anisotropy prior to application of a setting field. The magnetic anisotropy in the hard magnetic material is formed by oblique deposition in a direction approximately normal to the preferred direction of anisotropy in the resulting hard bias element.

High magnetic anisotropy hard magnetic bias element

A transducing head includes a first bias element, a second bias element, and a magnetoresistive sensor positioned between the first bias element and the second bias element. The first bias element and the second bias element are each formed of a permanent magnet material having a remanent magnetic moment in a range of about 200 to about 800 emu/cm. In a preferred embodiment, the permanent magnet material is an alloy comprising iron, platinum, and at least one material selected from copper, silver, magnesium, lead, zinc, bismuth, and antimony.

Magnetoresistive transducer with low magnetic moment, high coercivity stabilizing magnets

A transducing head has a magnetoresistive sensor and a first and a second dual path conductor/magnet structure for providing current to the magnetoresistive sensor and for stabilizing the magnetoresistive sensor. The first and the second dual path conductor/magnet structures are arranged in an abutted-junction configuration on opposite sides of the magnetoresistive sensor. Each of the first and the second dual path conductor/magnet structures has at least one bias layer and at least one conductor layer. Each bias layer is formed upon a bias seed layer positioned over one of the conductor layers. Each bias seed layer is selected to result in the bias layer formed upon it having a coercivity between about 1 kOe and about 5 kOe and an in-plane remnant squareness greater than about 0.8. Most preferably, each of the first and the second dual path conductor/magnet structures is formed of at least two conductor layers interspersed with at least one bias layer.

Magnetoresistive sensor having low resistivity dual path conductor and optimized magnetic

A transducing head has a magnetoresistive sensor, a first bias element, and a second bias element. The magnetoresistive sensor is positioned between the first and second bias elements, and has a sensor width. The first bias element has a first length and the second bias element has a second length. The direction of the first and second lengths are substantially similar to the direction of the sensor width. The first and second lengths in the range of about one-tenth to about twenty times the sensor width.

Magnetoresistive read sensor with short permanent magnets

The forced air helmet heater and defroster system for sport and utility vehicles begins with a small motor driven blower. This blower is mounted or fastened to the vehicle and adapted to draw in cold, fresh air from the exterior of the vehicle and force it through a heat source. The heat source warms or tempers this cold fresh air. Then, depending on system configuration, the air exiting the heat source is either forced to an insulated helmet delivery conduit equipped with a break-away connection on the inlet end and a diffuser on the exit end, or it can first be routed to an optional temperature control junction and then to the insulated helmet delivery conduit. The vehicle rider may then place the delivery conduit's exit diffuser between the interior side of the helmet and their cheek or chin whereby the expelling warm air flushes the helmet's interior thus warming the rider's face and breathing air as well as keeping the rider's face shield and eyeglasses defrosted and fog free.

Growing community of inventors

Northfield, MN, United States of America

David James Larson