Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Intel Corporation

Other

Osram Oledgmbh

David J O'Brien

Britta Göötz

Tim Frodsham

Benjamin Daniel Mangum

Norwin Von Malm

Sanjay Dabral

David Stewart Dunning

Nasser A Kurd

Theodore Zale Schoenborn

Naveen Cherukuri

Joseph A Treadway

Rainer Butendeich

David Racz

Darshan Kundaliya

Martin Haushalter

Muraleedhara Herur Navada

Michael J Tripp

R Tim Frodsham

Hubert Halbritter

Siegfried Herrmann

Tansen Varghese

Ion Stoll

Javed Sabir Barkatullah

Angela Eberhardt

Britta Goeoetz

Madis Raukas

Maria J Anc

Georg Dirscherl

Florian Peskoller

Michael Schumann

Victor A Calcerano

Jörg Frischeisen

Frank Möllmer

Philipp Pust

Ralph Bertram

Erik Johansson

Georg Roßbach

Mike J Tripp

Anne Meixner

Sarah E Bates

Tim Böscke

Marcus Adam

Markus Foerste

Jeff Wight

Vesna Mueller

Michael Klein

William E Kinsman

Robert E O'Brien

Sebastian Pielnhofer

Rajay R Pai

Victor Calcerano

An arrangement is disclosed. The arrangement comprises at least one semiconductor structure configured to convert a primary radiation into a secondary radiation; an encapsulation layer covering the at least one semiconductor structure; and at least one reflective layer arranged on the encapsulation layer. The semiconductor structure is arranged in a center of the arrangement, and a lateral extent of the arrangement is chosen such that an optically resonant condition is fulfilled for a wavelength of the secondary radiation in the encapsulation layer. Methods for producing an arrangement and an optoelectronic device are also disclosed.

Semiconductor structure arrangement, methods for producing a semiconductor structure arrangement and optoelectronic device

A light emitting device is disclosed. In an embodiment a light-emitting device includes a pixel comprising at least three sub-pixels, wherein the at least three sub-pixel include a first sub-pixel including a first conversion element, wherein the first conversion element includes a green phosphor, a second sub-pixel including a second conversion element, wherein the second conversion element includes a red phosphor and a third sub-pixel free of a conversion element, wherein the third sub-pixel is configured to emit blue primary radiation, wherein each sub-pixels has an edge length of at most 100 &#x3bc;m, and wherein the pixel is a linear chain of sub-pixels and a plurality of pixels is arranged in a two dimensional ordered pattern so that a first sub-pixel is never adjacent to a third sub-pixel in a vertical direction and in a horizontal direction of the ordered pattern.

Light-emitting device

An optoelectronic component may include a radiation-emitting semiconductor chip configured to emit electromagnetic radiation and a phosphor mixture. The excitation spectrum may have a peak wavelength ranging from 435 nm to 460 nm. The phosphor mixture may have three phosphors configured to emit electromagnetic radiation in different spectral ranges.

Phosphor mixture, conversion element and optoelectronic component

A component may include a semiconductor body and a converter layer. The converter layer may have phosphor particles and an electrically conductive matrix material where the phosphor particles are embedded in the matrix material. The converter layer may be arranged on the semiconductor body and may have a plurality of sublayers that are spatially set apart from one another and can be electrically contacted individually. The semiconductor body may have an active zone for producing electromagnetic radiation where the sublayers of the converter layer are designed for local electrical contacting of the active zone.

Component with electrically conductive converter layer

An optoelectronic component is disclosed. In an embodiment an optoelectronic component includes a semiconductor chip configured to emit radiation and a conversion element including quantum dots, the conversion element configured to convert a wavelength of the radiation, wherein each quantum dot includes a wavelength-converting core and an inorganic encapsulation, wherein inorganic encapsulations form a matrix material of at least adjacent quantum dots, and wherein the adjacent quantum dots have a distance of at least 10 nm.

Optoelectronic component and method of producing an optoelectronic component

A quantum dot structure, a radiation conversion element and a light emitting device are disclosed. In an embodiment a quantum dot structure includes an active region configured to emit radiation, a barrier region surrounding the active region and a trap region spaced apart from the active region, wherein a band edge of the trap region forms a trap configuration with respect to the barrier region for at least one type of charge carrier.

Quantum dot structure having a barrier region and a trap region, radiation conversion element and light-emitting device

A phosphor combination may include a first phosphor and a second phosphor. The second phosphor may be a red-emitting quantum dot phosphor. The phosphor combination may optionally include a third phosphor that is a red-emitting phosphor with the formula (MB) (TA)3-2x(TC)1+2xO4-4xN4x:E. A conversion element may include the phosphor combination. An optoelectronic device may include the phosphor combination and a radiation-emitting semiconductor chip.

Luminophore combination, conversion element, and optoelectronic device

An optoelectronic semiconductor chip may include an active region configured to emit electromagnetic radiation during operation of said optoelectronic semiconductor chip. The optoelectronic semiconductor chip comprises conversion elements arranged to convert the wavelength of the electromagnetic radiation emitted by the active region during operation, and at least one barrier at least partially impermeable to the electromagnetic radiation emitted by the active region. The barrier is disposed in a lateral direction between the conversion elements, the lateral direction being parallel to the main extension plane of the semiconductor body, and the barrier extending transversely to the lateral direction. The active region has at least two emission regions which can be driven separately from each other, and each of the conversion elements is disposed in a radiation direction of the electromagnetic radiation emitted from one of the emission regions. A method for manufacturing an optoelectronic semiconductor chip is also disclosed.

Optoelectronic semiconductor chip and method of manufacturing an optoelectronic semiconductor chip

A light-emitting device including a light-emitting semiconductor chip having a semiconductor layer sequence having at least one light-emitting semiconductor layer and a light-outcoupling surface, the light-emitting device further including a wavelength conversion layer arranged on the light-outcoupling surface, the wavelength conversion layer including quantum dots.

Light-emitting device with wavelenght conversion layer having quantum dots

A semiconductor nanocrystal structure may include a core, an inner absorption shell surrounding the core, at least one emission shell surrounding the inner absorption shell, and an outer absorption shell surrounding the emission shell(s). The core may include a different material than the optional inner absorption shell and/or the outer absorption shell. The core may be less absorbent to electromagnetic radiation as compared to the optional inner absorption shell and/or the outer absorption shell. An optoelectronic device may include the semiconductor nanocrystal structure.

Semiconductor nanocrystal structure and optoelectronic device

A light emitting device is disclosed. In an embodiment a light-emitting device includes a pixel comprising at least three sub-pixels, wherein a first sub-pixel includes a first conversion element having a green phosphor, wherein a second sub-pixel includes a second conversion element having a red phosphor and wherein a third sub-pixel is free of a conversion element, the third sub-pixel configured to emit blue primary radiation, wherein each sub-pixel has an edge length of at most 100 &#x3bc;m, and wherein the light-emitting device is configured to enhance a gamut coverage of an emitted radiation.

An optoelectronic device is disclosed. In an embodiment an optoelectronic device includes a primary radiation source configured to emit an electromagnetic primary radiation during operation of the device and a conversion element arranged in a beam path of the electromagnetic primary radiation, wherein the conversion element includes quantum dots configured to at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation during operation of the device, and wherein the quantum dots have a diameter of 50 nm inclusive to 500 nm inclusive.

Optoelectronic device

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment, an optoelectronic component includes a semiconductor layer sequence having an active region configured to emit radiation at least via a main radiation exit surface and a conversion element arranged directly downstream of the main radiation exit surface, wherein the conversion element is substrate-free and includes a first layer, wherein the first layer includes at least one conversion material embedded in a matrix material, wherein the matrix material includes at least one condensed inorganic sol-gel material selected from the following group consisting of water glass, metal phosphate, aluminum phosphate, modified monoaluminum phosphate, monoaluminum phosphate, alkoxytetramethoxysilane, tetraethylorthosilicate, methyltrimethoxysilane, methyltriethoxysilane, titanium alkoxide, silica sol, metal alkoxide, metal oxane, metal alkoxane, metal oxide, metal silicates, metal sulfates, and tungstates, and wherein the condensed sol-gel material has a proportion between 10 and 70 vol % in the first layer.

Optoelectronic component and method for producing an optoelectronic component

The invention relates to an optoelectronic component () comprising a semiconductor chip () configured for emitting radiation, a conversion element () comprising quantum dots () and configured for wavelength conversion of radiation, wherein the conversion element () comprises a layer structure () having a plurality of inorganic barrier layers (), wherein the inorganic barrier layers () are spatially separated from one another at least regionally by a hybrid polymer (), wherein the hybrid polymer () comprises organic and inorganic regions that are covalently bonded to one another, wherein the quantum dots () are embedded in the hybrid polymer () and/or at least in one of the barrier layers ().

A pulse oximetry device includes a light emission device configured to emit light with a wavelength in a first wavelength interval and light with a wavelength in a second wavelength interval, a first light detector configured to detect light with a wavelength in the first wavelength interval, but not to respond to light with a wavelength in the second wavelength interval, and a second light detector configured to detect light with a wavelength in the first wavelength interval and detect light with a wavelength in the second wavelength interval, wherein the first light detector has a first light reception surface, the second light detector has a second light reception surface, and the first light reception surface and the second light reception surface are arranged in a common plane and are interleaved with one another.

Pulse oximetry device and method of operating a pulse oximetry device

Growing community of inventors

Portland, OR, United States of America

David J O'Brien