S.c. Fluids, Inc.

Epion Corporation

Other

David J Mount

Allen R Kirkpatrick

Jerald P Dykstra

Mohan Chandra

Ijaz H Jafri

Wesley J Skinner

Michael A Costantini

Heiko D Moritz

Rick M Heathwaite

Keith Randal Pope

Laura Beth Rothman

Stephen B Douglas

Rick C White

Clifton Busby

Jim Boyd

Raymond J Doww, Iii

A supercritical fluid cleaning system uses process fluid for operating rotary motors in the chamber with fluid bearings and fluid load levitation for rotating workpieces and impellers. Rotating speed and direction sensors and a home position locator facilitate motor control. Impellers add further agitation of the fluid in the chamber, faster processing, and greater uniformity of supercritical fluid components and increase mass transfer of fluid to the processed surface. Centrifugal operated clips and cassettes hold wafers and impellers. Non-contact, fluid operated rotating mechanisms reduce contamination. Physical, rotational, and shear affects are enhanced through centrifugal forces which can induce the separation of films localized deposits or molecular products of the reaction from the surface. There is a concomitant agitation of fluid, and continuous angular acceleration imparted to the processed surface features.

Method and apparatus for rotation of a workpiece in supercritical fluid solutions for removing photo resist, residues and particles therefrom

A supercritical fluid cleaning system and method comprising mainly a pressure chamber, a closable lid, a substrate support for holding at least one substrate, a rotable shaft extending outward from within the chamber, an external rotary power source coupled magnetically or otherwise to the shaft, and a rotable component or impeller attached to the chamber end of the shaft in close proximity to the substrate holding position, and baffles located close to the rotable component. The rotable component is con|figured for rotation within the supercritical phase fluid in the chamber close to the surface of the wafer for causing agitation and turbulent fluid flow against the surface of the substrate, and increased intra-chamber fluid circulation.

Adding energy to a cleaning process fluid for removing photo resist, residues and particles from semiconductor substrates, photo masks, reticles, disks and flat-panel displays

A gas cluster ion beam (GCIB) etching process having a system for producing a gas cluster ion beam utilized to controllably etch a substrate. The gas cluster ion beam is initially directed along a preselected longitudinal axis. A portion of the GCIB etching apparatus is operably connected to the beam producing system and contains the substrate to be etched when impacted by said gas cluster ion beam. The portion of the GCIB etching apparatus includes a system for directing the gas cluster ion beam in a direction offset from the preselected longitudinal axis while permitting unwanted ionizing radiation to remain directed along the longitudinal axis. A substrate holder is located within a portion of the GCIB etching apparatus for positioning the substrate in line with the offset gas cluster ion beam during the etching process, and the unwanted ionizing radiation being substantially prevented from impinging upon the substrate during the etching process.

Enhanced etching/smoothing of dielectric surfaces

A continuous flow, steady state fluid delivery and recovery system for a process chamber and processes requiring supercritical fluid and desired additives including co-solvents, for conducting repetitive batch processing operations in an automated environment, for such processes as supercritical carbon dioxide cleaning and processing of semiconductor wafers. The system provides for steady-state operation of fluid flow and byproducts recovery while the process chamber is brought rapidly and repeatedly on and off line as in batch operations and for various process steps.

Supercritical fluid delivery and recovery system for semiconductor wafer processing

A dry process for the cleaning of precision surfaces such as of semiconductor wafers, by using process materials such as carbon dioxide and useful additives such as cosolvents and surfactants, where the process materials are applied exclusively in gaseous and supercritical states. Soak and agitation steps are applied to the wafer, including a rapid decompression of the process chamber after a soak period at higher supercritical pressure, to mechanically weaken break up the polymers and other materials sought to be removed, combined with a supercritical fluid flush to carry away the loose debris.

Supercritical fluid cleaning process for precision surfaces

A gas cluster ion beam (GCIB) etching apparatus having a system for producing a gas cluster ion beam utilized to controllably etch a substrate. The gas cluster ion beam is initially directed along a preselected longitudinal axis. A portion of the GCIB etching apparatus is operably connected to the beam producing system and contains the substrate to be etched when impacted by said gas cluster ion beam. The portion of the GCIB etching apparatus includes a system for directing the gas cluster ion beam in a direction offset from the preselected longitudinal axis while permitting unwanted ionizing radiation to remain directed along the longitudinal axis. A substrtate holder is located within a portion of the GCIB etching apparatus for positioning the substrate in line with the offset gas cluster ion beam during the etching process, and the unwanted ionizing radiation being substantially prevented from impinging upon the substrate during the etching process.

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North Andover, MA, United States of America

David J Mount