International Business Machines Corporation

David J Gundlach

Walter Heinrich Riess

Johannes Georg Bednorz

Heike E Riel

Gerhard Ingmar Meijer

Siegfried Friedrich Karg

Gerhard J Meijer

A field effect device includes a source electrode, a drain electrode spaced laterally apart from the source electrode, a channel formed between the source electrode and the drain electrode, and a gate electrode separated from the channel by an insulating layer. The channel includes a switching material that is reversibly switchable between a lower conductivity state and a higher conductivity state by at least one of: (i) application of a predetermined voltage between the source electrode and the drain electrode or between the gate electrode and at least one of the source electrode and the drain electrode, (ii) application of a voltage or a current to the switching material in the channel, and (iii) application of at least one of heat and light. Each of the conductivity states is persistent without the need for a sustaining excitation signal including an electrical field, heat and/or light applied to the device.

Field effect device with a channel with a switchable conductivity

A field effect device () includes a source electrode (), a drain electrode (), a channel () formed between the source electrode () and the drain electrode (), and a gate electrode () separated from the channel () by an insulating layer (), wherein the channel () comprises a switching material reversibly switchable between a lower conductivity state and a higher conductivity state, each of the conductivity states being persistent.

A device () with a switchable capacitance comprises a first and a second electrode () facing each other, a dielectric layer () between a first and a second capacitor electrode (), and a switching member () between the second electrode () and the dielectric layer (), the switching member () comprising a switching material reversibly switchable between a lower conductivity state and a higher conductivity state, each of the lower conductivity state and the higher conductivity state being persistent, wherein the capacitance of the device () depends on the conductivity state of the switching material.

Growing community of inventors

Adliswil, Switzerland

David J Gundlach