Semitool, Inc.

Rensselaer Polytechnic Institute

Passive Fire Protection Partners

David J Duquette

Shyam P Murarka

Ahila Krishnamoorthy

Monroe William Shumate

Walter A Johnson

Steven N Volenec

Kenneth A Turpin

Ronald J Gutmann

Robert D Hamilton

Edward A Bright

Joseph M Steigerwald

Lisa J Loparco

One aspect is directed to an improved method for polishing an integrated circuit. According to one aspect, metal features deposited on an integrated circuit are polished using electropolishing techniques. Because electropolishing is used, polishing avoids removal of softer insulating materials of the integrated circuit.

Electrochemical planarization of metal feature surfaces

A metallized structure for use in a microelectronic circuit is set forth. The metallized structure comprises a dielectric layer, an ultra-thin film bonding layer disposed exterior to the dielectric layer, and a low-Me concentration, copper-Me alloy layer disposed exterior to the ultra-thin film bonding layer. The Me is a metal other than copper and, preferably, is zinc. The concentration of the Me is less than about 5 atomic percent, preferably less than about 2 atomic percent, and even more preferably, less than about 1 atomic percent. In a preferred embodiment of the metallized structure, the dielectric layer, ultra-thin film bonding layer and the copper-Me alloy layer are all disposed immediately adjacent one another. If desired, a primary conductor, such as a film of copper, may be formed exterior to the foregoing layer sequence. The present invention also contemplates methods for forming the foregoing structure as well as electroplating baths that may be used to deposit the copper-Me alloy layer.

Metallization structures for microelectronic applications and process for forming the structures

Copper alloy electroplating bath for microelectronic applications

An intumescent material includes a liquid carrier with a corrosion inhibitor, such as a coating forming material, expandable particulate graphite (flake graphite or lump graphite) and if desired a filler. The intumescent material has a pH greater than 7.0, to reduce the corrosive properties of the intumescent material for most metals used in the construction industry and to provide a chemical environment conducive to the forming of a corrosion inhibiting layer by the corrosion inhibitor. The method of making the intumescent material includes combining the liquid carrier, the corrosion inhibitor, the expandable particulate graphite, the filler (if used), and a pH enhancer (if necessary to bring the intumescent material within the desired pH range), to form an intumescent material having a pH greater than 7.0.

Intumescent material

A system for performing chemical mechanical planarization for a semiconductor wafer includes a chemical mechanical polishing system including a chemical mechanical polishing slurry. The system also includes a device for measuring the electrochemical potential of the slurry during processing which is electrically connected to the slurry, and a device for detecting the end point of the process, based upon the electrochemical potential of the slurry, which is responsive to the electrochemical potential measuring device. Accurate in situ control of a chemical mechanical polishing process is thereby provided.

Systems for performing chemical mechanical planarization and process for

Growing community of inventors

Loudonville, NY, United States of America

David J Duquette