Texsem Laboratories, Inc.

Other

Advanced Micro Devices Corporation

David J Dingley

David P Field

Roger L Alvis

Brent L Adams

An apparatus for determining crystallographic characteristics of a specimen having at least one crystal includes an electron beam generator, a beam deflector for adjusting the tilt and azimuth angles of the electron beam relative to the specimen, a stage for holding the specimen, an image collection system for obtaining a plurality of dark field images, a data store, and a processor for processing the dark field images to identify a plurality of crystal lattice planes associated with the crystals. The dark field images are obtained under different electron beam tilt and azimuth deflection conditions. The bright pixels in each dark field image are identified and utilized to determine the spatial location and orientation of the crystal lattice planes and the crystals themselves. An orientation image is produced that represents the orientation of the crystals within the specimen.

Method and apparatus for determining crystallographic characteristics

An apparatus for determining the reliability of crystallographic solutions of a specimen includes an electron beam generator, a stage for holding the specimen, an image collection system for obtaining diffraction images of crystals within the specimen, and processor for processing the diffraction images to obtain most probable indexing solutions for the crystals and to generate confidence factors associated with the most probable indexing solutions. The apparatus may utilize the confidence factors to determine the phase of the crystals within the specimen. The confidence factors may also be incorporated into reports representing the statistical confidence of various crystallographic characteristics of the specimen.

Method and apparatus for determining crystallographic characteristics in

A sample to be analyzed by a scanning electron microscope is held at an electrostatic potential higher than the recording plate of the microscope. This provides that electrons scattered from the sample which are at an energy level lower than a chosen level are drawn back into the sample by the potential of the sample, while other, higher energy scattered electrons reach the recording plate to form a pattern thereon.

Energy filtering for electron back-scattered diffraction patterns

An imaging apparatus (10) includes a scanning electron microscope (12) which is controlled to bombard numerous points (62) of a material sample (24) with an electron beam (18). Backscatter diffraction patterns are collected by an image collection system (26) which may include both a slower responding video camera (32) and a faster responding diode array (40). For a baseline point (62), an electron backscatter diffraction pattern collected at the video camera (32) is analyzed to identify representative pixels which reside along Kikuchi bands (78). Backscatter images from subsequent points (62) are rapidly compared (98) with the baseline to detect changes. When changes are not detected, EBSPs are not analyzed. When changes are detected, EBSPs are analyzed to generate new baselines. The resulting collection of analyzed EBSPs are processed (104) to identify microstructure attributes and to characterize defects (64).

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Salt Lake City, UT, United States of America

David J Dingley