Mks Instruments, Inc.

Applied Materials, Inc.

Eni Technology, Inc.

Advanced Energy Industries, Inc.

Tokyo Electron Limited

Msk Instruments, Inc.

David J Coumou

Daniel M Gill

Yuriy Elner

Ross Reinhardt

Richard Pham

Aaron T Radomski

Dennis M Brown

Larry J Fisk, Ii

David John Peterson

Yogendra K Chawla

Eldridge M Mount, Iv

Michael L Kirk

Todd Heckleman

Chad S Samuels

Jonathan W Smyka

Daniel J Lincoln

Farzad Houshmand

Shaun T Smith

Aung Toe

Ray Choueiry

Alok Ranjan

Kelvin Chan

Timothy Joseph Franklin

Sergey Alexandrovich Voronin

Anwar Husain

Jin Huh

Joseph Frederick Behnke

Chuang-Chia Lin

Xue Chang

Tao Zhang

Joseph Frederick Sommers

Yusuke Yoshida

Sang-Won Lee

Vadim Lubomirsky

Kevin P Nasman

Xiaopu Li

Michelle SanPedro

Mariusz Oldziej

Alexander Sulyman

Senthil Kumar Vadivelu

Jaehyun Kim

Abdullah Zafar

Nathan Ransom

Priya Gambhire

Jeongseok Jang

Nicholas Nelson

Paul Eyerman

Kasturi Sarang

Usman Chowdhury

Ping-Hwa Hsieh

Kristopher Ford

Jeremy Zuch

Michael Kirk

Zhi Wang

Scott E White

Yuiry Elner

Raymond Brooks

Riad E El-Choueiry

Clifford C Weatherell

William Stenglein

Carl Ioriatti

Larry J Fisk Ii

Jon Smyka

Clifford Weatherell

Kevin Nasman

Vapor concentration sensors for deposition process or deposition chamber condition monitoring are described. In an example, a deposition system includes a deposition chamber, a deposition precursor source coupled to an inlet of the deposition chamber, and a non-dispersive infrared (NDIR) vapor concentration sensor between the deposition precursor source and the deposition chamber.

Vapor concentration sensors for process chambers

Embodiments disclosed herein include a module, comprising: a substrate, wherein the substrate comprises a dielectric material, and a microstrip resonator on the substrate. In an embodiment, a microstrip transmission line is on the substrate adjacent to the microstrip resonator, and the microstrip resonator is spaced from the microstrip transmission line by a gap. In an embodiment, a ground plane on a surface of the substrate is opposite from the microstrip resonator.

Printed microwave resonator for measuring high electron density plasmas

This disclosure describes systems, methods, and apparatus for adjusting at least one actuator using at least one control output value to control a plasma processing system. More specifically, the controlling is based on receiving a reference signal defining target values for a parameter that is controlled at an output within the plasma processing system; obtaining a measure of the parameter, where the parameter is measured at a first sampling frequency; calculating one or more internal control signal values at a second sampling frequency; predicting, using an internal model, one or more internal measurements of the controlled parameter at the second sampling frequency; and adjusting, based upon the one or more control output values, at least one actuator at the first sampling frequency, where the control output values are based on the internal control signal values and the predicted internal measurements.

Multi-step predictive control system

Embodiments disclosed herein include a method of impedance tuning in a semiconductor processing tool. In an embodiment, the method comprises measuring a voltage and a current of a transmission line, converting an analog voltage signal and an analog current signal into a digital voltage signal and a digital current signal, calculating a u-vector from the digital voltage signal and the digital current signal, calculating a C1 position of a first capacitor with real components of the u-vector, and calculating a C2 position of a second capacitor with imaginary components of the u-vector.

Impedance tuning utility of vector space defined by transmission line quantities

A method includes depositing a first layer of a first material onto a surface of a chamber component of a processing chamber. The first material comprises a polymer, the polymer having a dielectric strength of at least 40 MV/m. The method further includes depositing a second layer of a second material onto the first layer. The second material comprises a first ceramic material impregnated into the first polymer or a second polymer. The method further includes depositing a third layer. The third layer is of a third material. The third material includes the first ceramic material or a second ceramic material. The third material does not adhere to the first polymer or the second polymer. The third material does adhere to the first ceramic material or the second ceramic material of the second layer.

Plasma resistant arc preventative coatings for manufacturing equipment components

Embodiments disclosed herein include a processing tool. In an embodiment, the processing tool comprises a power supply, an impedance matching network coupled to the power supply, a cathode, wherein the power supply is configured to supply power through the impedance matching network to the cathode, and a processing module, wherein the processing module is communicatively coupled to the power supply and the impedance matching network.

High bandwidth architecture for centralized coherent control at the edge of processing tool

Embodiments disclosed herein include a method for field adjusting calibrating factors of a plurality of RF impedance matches for control of a plurality of plasma chambers. In an embodiment, the method comprises collecting and storing in a memory data from operation of the plurality of RF impedance matches, and finding a tune space for each of the plurality of RF impedance matches from the collected data. In an embodiment, the method further comprises finding adjustments to account for variability in each of the plurality of RF impedance matches, finding adjustments to variable tuning elements of the plurality of RF impedance matches to account for time varying and process related load impedances, and the method further comprises obtaining operating windows for the variable tuning elements in the plurality of RF impedance matches.

Fleetwide impedance tuning performance optimization

Embodiments disclosed herein include a process power controller for a plasma processing tool. In an embodiment, the process power controller includes a process power source optimizer, a source predictor, and a process uniformity controller. In an embodiment, the source predictor is communicatively coupled to the process power source optimizer and the process uniformity controller.

Control and prediction of multiple plasma coupling surfaces and corresponding power transfer

Embodiments disclosed herein include a sensor. In an embodiment, the sensor comprises a board, wherein an aperture is formed through the board, a current loop winding through the board around the aperture, and a voltage ring around the aperture and within an inner perimeter of the current loop, wherein the voltage ring comprises an interior ring, an insulator ring around the interior ring, and an exterior ring around the insulator ring.

RF measurement from a transmission line sensor

This disclosure describes systems, methods, and apparatus for a plasma processing system. A method comprises receiving a reference signal defining target values for a parameter that is controlled at an output within the plasma processing system, obtaining a measure of the parameter that is controlled at the output, and calculating a delay between the target values of the setpoint signal and corresponding actual parameter values achieved at the output. The method also comprises providing, based upon the delay, a time-shifted amplitude error indicative of an error between the target values and the actual parameter values and adjusting at least one actuator, based upon the delay and the time-shifted amplitude error, in advance of when an actual parameter value is desired at an actuator output of the at least one actuator while maintaining the output within a threshold range.

Adaptive predictive control system

A power supply control system includes a power generator for providing a signal to a load. The power generator includes a power controller controlling a power amplifier. The power generator includes an adaptive controller for varying the output signal controlling the power amplifier. The adaptive controller compares an error between a measured output and a predicted output to determine adaptive values applied to the power controller. The power generator also includes a sensor that generates an output signal that is digitized and processed. The sensor signal is mixed with a constant K. The constant K is varied to vary the processing of the sensor output signal. The value K may be commutated based on the phase, frequency, or both phase and frequency, and the bandwidth of K is determined by coupled power in the sensor output signal.

Adaptive control for a power generator

Plasma ion energy distribution for ions having different masses is controlled by controlling the relationship between a base RF frequency and a harmonic RF frequency. By the controlling the RF power frequencies, characteristics of the plasma process may be changed based on ion mass. The ions that dominate etching may be selectively based upon whether an ion is lighter or heavier than other ions. Similarly, atomic layer etch processes may be controlled such that the process may be switched between a layer modification step and a layer etch step though adjustment of the RF frequencies. Such switching is capable of being performed within the same gas phase of the plasma process. The control of the RF power includes controlling the phase difference and/or amplitude ratios between a base RF frequency and a harmonic frequency based upon the detection of one or more electrical characteristics within the plasma apparatus.

Method for ion mass separation and ion energy control in process plasmas

A matching network system for a radio frequency (RF) power delivery system includes a matching network having a variable tuning element. The matching network introduces a variable impedance between a RF power generator and a load. A stepper motor adjusts a position of the variable tuning element. The matching network system also includes a controller communicating with the matching network. The controller receives the position of the stepper motor and compares the position with a stored, predetermined position. The controller generates a position correction and applies the position correction to the position to provide improved repeatability or reproducibility.

Impedance matching network model based correction scheme and performance repeatability

A radio frequency (RF) power delivery system includes a first RF generator and a second RF generator. The first RF generator operates as a master RF generator, and the second RF generator operates as a slave RF generator. The slave RF generator includes a detector for sensing an electrical characteristic of the RF signal of the slave RF generator. The slave RF generator also includes a detector for sensing an electrical characteristic of the RF signal from the master RF generator. Operation of the slave RF generator is controlled by a host or controller. The host or controller operates the slave RF generator in accordance with electrical properties determined by the second detector.

Pulse synchronization by monitoring power in another frequency band

Growing community of inventors

Webster, NY, United States of America

David J Coumou