Analog Devices International Unlimited Company

Analog Devices Global

Analog Devices,inc.

Analog Devices Global Unlimited Company

David J Clarke

Alan J O'Donnell

David Aherne

Patrick Martin McGuinness

Edward John Coyne

Javier Alejandro Salcedo

Shaun Bradley

David M Boland

Stephen Denis Heffernan

Mark Forde

Colm Patrick Heffernan

Kevin B Manning

Michael A Looby

Thomas G O'Dwyer

John Anthony Cleary

Gavin Patrick Cosgrave

Albert C O'Grady

Nijun Wei

Bernard Patrick Stenson

William Allan Lane

Paul Malachy Daly

John Twomey

Kieran K Heffernan

Andrew David Bain

Brian Anthony Moane

Juan Luo

Yuhong Huang

Brian B Moane

Seamus Murnane

Denis Ellis

Donal McAuliffe

Seamus Paul Whiston

Michael G Tuthill

Michael P Daly

Anne Maria Deignan

Denis J Doyle

Liam Joseph White

Brian Sweeney

Keith A Moloney

Albert C O′Grady

Alan J O′Donnell

Jonathan Glen Pfeifer

Minsheng Li

Alan J O'DONNELL

Patrick Mcguinness

Patrick M Mcguinness

Patrick Martin Mcguinness

The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes.

Wearable device with energy harvesting

The disclosed technology generally relates to integrated circuit devices with wear out monitoring capability. An integrated circuit device includes a wear-out monitor device configured to record an indication of wear-out of a core circuit separated from the wear-out monitor device, wherein the indication is associated with localized diffusion of a diffusant within the wear-out monitor device in response to a wear-out stress that causes the wear-out of the core circuit.

Lifetime indicator system

Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.

Systems and methods for charge storage and providing power

Spark gap structures for detection and protection against electrical overstress events

Exposure monitor device

Charge storage with electrical overstress protection

The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, a device configured to monitor electrical overstress (EOS) events includes a pair of spaced conductive structures configured to electrically arc in response to an EOS event, wherein the spaced conductive structures are formed of a material and have a shape such that arcing causes a detectable change in shape of the spaced conductive structures, and wherein the device is configured such that the change in shape of the spaced conductive structures is detectable to serve as an EOS monitor.

Electrical overstress detection device

Storing charge associated with electrical overstress

Wear-out monitor device

Electrical overstress reporting

Growing community of inventors

Patrickswell, Ireland

David J Clarke