Az Electronic Materials USA Corp.

Braggone Oy

David J Abdallah

Mark O Neisser

Ruzhi Zhang

Francis Michael Houlihan

Ralph R Dammel

M Dalil Rahman

Douglas S McKenzie

PingHung Lu

WooKyu Kim

Hengpeng Wu

Allen G Timko

Ping-Hung Lu

Guanyang Lin

Huirong Yao

Jian Yin

Yusuke Takano

Hong Zhuang

Andrew R Romano

Jin Li

Woo-Kyu Kim

Georg Pawlowski

Kazunori Kurosawa

Jain Yin

Rhuzi Zhang

John Biafore

Douglas Mckenzie

A polymer comprising a siloxane polymer having at least one Si&#x2014;OH group and at least one Si&#x2014;OR group, where R is condensation stabilizing group optionally having a reactive functional group, wherein the siloxane polymer, when placed into a solvent, has a weight average molecular weight increase of less than or equal to 50% after aging for one week at 40&#xb0; C. as measured by GPC is provided.

Silicon-based antireflective coating compositions

The invention related to an antireflective coating comprising a mixture of a first polymer and a second polymer, and a thermal acid generator, where the first polymer comprises at least one fluoroalcohol moiety, at least one aliphatic hydroxyl moiety, and at least one acid moiety other than fluoroalcohol with a pKa in the range of about 8 to about 11; where the second polymer is a reaction product of an aminoplast compound with a compound comprising at least one hydroxyl and/or at least one acid group. The invention further relates to a process for using the novel composition to form an image.

Antireflective coating composition and process thereof

The present invention discloses novel bottom anti-reflective coating compositions where a coating from the composition has an etch rate that can be regulated by the etch plate temperature.

Antireflective coating compositions

Base soluble polymer comprising at least one sulfonyl group where at least one carbon atom at &#x3b1;-position and/or &#x3b2;-position and/or &#x3b3;-position with respect to the sulfonyl group has a hydroxyl group, where the hydroxyl group is protected or unprotected are described.

Base soluble polymers for photoresist compositions

The present invention relates to a process for forming an reverse tone image on a device comprising; a) forming an optional absorbing organic underlayer on a substrate; b) forming a coating of a photoresist over the underlayer; c) forming a photoresist pattern; d) forming a polysilazane coating over the photoresist pattern from a polysilazane coating composition, where the polysilazane coating is thicker than the photoresist pattern, and further where the polysilazane coating composition comprises a silicon/nitrogen polymer and an organic coating solvent; e) etching the polysilazane coating to remove the polysilazane coating at least up to a level of the top of the photoresist such that the photoresist pattern is revealed; and, f) dry etching to remove the photoresist and the underlayer which is beneath the photoresist, thereby forming an opening beneath where the photoresist pattern was present. The invention further relates to a product of the above process and to a microelectronic device made from using the above process.

Hardmask process for forming a reverse tone image using polysilazane

The present invention relates to a composition comprising: where Ris a non-hydrolysable group and n is an integer ranging from 1 to 3; and (b) a crosslinking catalyst. The composition is useful in forming low k dielectric constant materials and as well as hard mask and underlayer materials with anti-reflective properties for the photolithography industry.

Silicone coating composition

The present invention relates to an organic spin coatable antireflective coating composition comprising a polymer comprising at least one unit with 3 or more fused aromatic rings in the backbone of the polymer and at least one unit with an aliphatic moeity in the backbone of the polymer. The invention further relates to a process for imaging the present composition.

Antireflective coating composition comprising fused aromatic rings

The present invention relates to an antireflective composition comprising a thermal acid generator and an epoxy polymer comprising at least one unit of structure 1, at least one unit of structure 2, where, Rto Rare independently selected from hydrogen and C-Calkyl, structure 1 has a configuration selected from cis, trans or mixture thereof, and x and y are the mole % of the monomeric units in the polymer. The invention also relates to a process for manufacturing a microelectronic device.

Antireflective coating composition

The invention relates to an antireflective coating composition comprising a polymer, a crosslinker and a thermal acid generator, where the polymer comprises at least one unit of structure (1), at least one unit of structure (2) and at least one structure of structure (3), where Rto Ris independently selected from H and C-Calkyl, R' and R&#x2033; is independently selected from H and C-Calkyl, X is C-Calkylene, Y is C-Calkylene. The invention further relates to a process for imaging a photoresist coated over the antireflective coating composition.

A process for imaging a photoresist comprising the steps of, a) forming a stack of multiple layers of organic antireflective coatings on a substrate; b) forming a coating of a photoresist over the upper layer of the stack of multiple layers of organic antireflective coatings; c) imagewise exposing the photoresist with an exposure equipment; and, d) developing the coating with a developer.

Process of imaging a photoresist with multiple antireflective coatings

The present invention relates to an antireflecting coating composition which is capable of forming a crosslinked coating underneath a layer of photoresist comprising a silicon polymer, where the silicon polymer comprises at least one unit with the structure 1, where, Ris selected from C-Calkyl. The invention also relates to a process for imaging this composition.

Antireflective coating composition based on silicon polymer

High silicon-content resin composition that can be used to form thin film thermosets, useful in forming low k dielectric constant materials and as well as hard mask materials with anti-reflective properties for the photolithography industry are disclosed.

High silicon-content thin film thermosets

The present invention relates to an antireflective coating composition comprising, (i) a thermal acid generator; (ii) a crosslinkable polymer comprising at least one aromatic group; and, (iii) a polymeric crosslinker comprising at least one unit of structure (6), where Rto Ris independently selected from H, (C-C) alkyl and aromatic group, Rand Rare independently (C-C) alkyl. The invention also relates to a process for imaging the antireflective coating composition of the present invention.

Novel self-crosslinking polymers are provided and which are useful in antireflective coatings to reduce outgassing.

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Bernardsville, NJ, United States of America

David J Abdallah