Qualcomm Incorporated

Rapid Bridge LLC

David Ian West

Vaishnav Srinivas

Michael J Brunolli

Dexter Tamio Chun

Jungwon Suh

Behnam Malekkhosravi

Philip Michael Clovis

Charles David Paynter

Jan Christian Diffenderfer

Daniel J Woodard

Nan Chen

Ryan David Lane

Deepti Vijayalakshmi Sriramagiri

Yu Song

Jason Alan Thurston

Robert Won Chol Kim

Paul Lawrence Viani

Bernie Jord Yang

Michael Joseph Brunolli

Dynamic random access memory (DRAM) backchannel communication systems and methods are disclosed. In one aspect, a backchannel communication system allows a DRAM to communicate error correction information and refresh alert information to a System on a Chip (SoC), applications processor (AP), or other memory controller.

Dynamic random access memory (DRAM) backchannel communication systems and methods

Methods, apparatus, and system for use in adaptive communication interfaces are disclosed. An adaptive communication interface is provided, in which a high-speed clock provided in a high-speed mode of operation is suppressed in a low-power mode of operation. In the low-power mode of operation, a low-speed command clock is used for data transfers between a memory device and a system-on-chip, applications processor or other device. A method for operating the adaptive communication interface may include using a first clock signal to control transmissions of commands to a memory device over a command bus. In a first mode of operation, the first clock signal controls data transmissions over the adaptive communication interface. In a second mode of operation, the second clock signal controls data transmissions over the adaptive communication interface. The frequency of the second clock signal may be greater than the frequency of the first clock signal.

Low-power clocking for a high-speed memory interface

A memory sub-system may include a memory controller having error correction code (ECC) encoder/decoder logic. The memory controller may be configured to embed link ECC parity bits in unused data mask bits and/or in a mask write data during a mask write operation. The memory controller may also be configured to protect at least a location of the link ECC parity bits during the mask write operation.

Protecting an ECC location when transmitting correction data across a memory link

A method of memory array and link error correction in a low power memory sub-system includes embedding error correction code (ECC) parity bits within unused data mask bits during a normal write operation and during a read operation. The method also includes embedding the ECC parity bits in a mask write data byte corresponding to an asserted data mask bit during a mask write operation.

Memory array and link error correction in a low power memory sub-system

A memory device may include link error correction code (ECC) decoder and correction circuitry. The ECC decoder and correction circuitry may be arranged in a write path and configured for link error detection and correction of write data received over a data link. The memory device may also include memory ECC encoder circuitry. The memory ECC encoder circuitry may be arranged in the write path and configured for memory protection of the write data during storage in a memory array.

Separate link and array error correction in a memory system

Providing memory training of dynamic random access memory (DRAM) systems using port-to-port loopbacks, and related methods, systems, and apparatuses are disclosed. In one aspect, a first port within a DRAM system is coupled to a second port via a loopback connection. A signal is sent to the first port from a System-on-Chip (SoC), and passed to the second port through the loopback connection. The signal is then returned to the SoC, where it may be examined by a closed-loop engine of the SoC. A result corresponding to a hardware parameter may be recorded, and the process may be repeated until an optimal result for the hardware parameter is achieved at the closed-loop engine. By using a port-to-port loopback configuration, the DRAM system parameters regarding timing, power, and other parameters associated with the DRAM system may be trained more quickly and with lower boot memory usage.

Providing memory training of dynamic random access memory (DRAM) systems using port-to-port loopbacks, and related methods, systems, and apparatuses

Various aspects of an approach for routing die signals in an interior portion of a die using external interconnects are described herein. The approach provides for contacts coupled to circuits in the interior portion of the die, where the contacts are exposed to an exterior portion of the die. The external interconnects are configured to couple these contacts so that signals from the circuits in the interior portion of the die may be routed externally to the die. In various aspects of the disclosed approach, the external interconnects are protected by a packaging for the die.

Method and apparatus for routing die signals using external interconnects

Providing memory training of dynamic random access memory (DRAM) systems using port-to-port loopbacks, and related methods, systems, and apparatuses are disclosed. In one aspect, a first port within a DRAM system is coupled to a second port via a loopback connection. A training signal is sent to the first port from a System-on-Chip (SoC), and passed to the second port through the loopback connection. The training signal is then returned to the SoC, where it may be examined by a closed-loop training engine of the SoC. A training result corresponding to a hardware parameter may be recorded, and the process may be repeated until an optimal result for the hardware parameter is achieved at the closed-loop training engine. By using a port-to-port loopback configuration, the DRAM system parameters regarding timing, power, and other parameters associated with the DRAM system may be trained more quickly and with lower boot memory usage.

Writing to and reading from dynamic random access memory (DRAM) by a system on chip (SoC) over a multiphase multilane memory bus has power consumption optimized based on bit error rate (BER) and one or more thresholds. The bit error rate (BER) may be measured and used to control parameters to achieve optimal balance between power consumption and accuracy. The bit error rate (BER) measurement, purposely adding jitter, and checking against the thresholds is performed during normal mission-mode operation with live traffic. Error detection may cover every memory data transaction that has a block of binary data.

Dynamic control of signaling power based on an error rate

Systems and methods for recovering clock and data from a data input signal are disclosed that sample a plurality of clock phase signals with the data input signal to determine a timing relationship between the data input signal and the clock phase signals and use the determined to timing relationship to select one of the clock phase signals to use for sampling the data input signal to produce recovered data. The CDR can include a glitch suppression module to suppress glitches on the clock output signal that could be caused by large instantaneous jitter on the data input signal. A clock and data recovery circuit (CDR) using these methods can quickly lock to a new data input signal and can reliably receive data when there is large instantaneous timing jitter on the data input signal.

Clock and data recovery with high jitter tolerance and fast phase locking

Some features pertain to an integrated device that includes a first package, a set of interconnects, and a second package. The first package includes a first substrate comprising a first surface and a second surface. The first package includes a redistribution portion comprising a redistribution layer. The first package includes a first die coupled to the first surface of the first substrate. The set of interconnects is coupled to the redistribution portion of the first package. The second package is coupled to the first package through the set of interconnects. The second package includes a second substrate comprising a first surface and a second surface; and a second die coupled to the first surface of the second substrate, where the second die is electrically coupled to the first die through the second substrate of the second package, the set of interconnects, and the redistribution portion of the first package.

Package on package (PoP) integrated device comprising a redistribution layer

An integrated circuit includes core logic and a plurality of interface blocks disposed about a periphery of the core logic. A plurality of input or output (I/O) circuits is assigned to one of the plurality of interface blocks. The I/O circuits include external I/O circuits coupled to a device other than the integrated circuit and internal I/O circuits coupled to the integrated circuit. Each interface block includes a first plurality of I/O circuits disposed on a first side of the interface block and a second plurality of I/O circuits disposed on a second side of the interface block. Each interface block also includes interface logic for the interface block between the first plurality of I/O circuits and the second plurality of I/O circuits, and a logic hub that includes a clock distribution of minimal length that drives launch logic and capture logic to form the I/O circuits of the interface block.

Integrated circuit floorplan for compact clock distribution

A master measure circuit is disclosed that may select from various nodes on a delay path carrying a signal. The master measure circuit measures the delay for propagation of the signal from one selected node to another selected node and controls an adjustable delay circuit in the delay path accordingly.

Measure-based delay circuit

A pool of die designs includes die designs having metal programmable base layers. Die designs from the pool are selected for use in fabricating dies. Die designs are added to the pool by customization of die designs already in the pool or by preparing custom die designs that incorporate a metal programmable base layer. In some embodiments multi-tile dies are provided with I/O slots configurable for either inter tile communication or inter die communication.

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San Diego, CA, United States of America

David Ian West