Tokyo Electron Limited

Magnetic Solutions (holdings) Limited

David Hurley

Ian Colgan

Ioan Domsa

Barry Clarke

Gerhardus Van Der Linde

Toru Ishii

Lars-Ake Ragnarsson

Mihaela Ioana Popovici

George Eyres

Patrick Hughes

Maciej Burel

Robert Daniel Clark

Dina Triyoso

Noel O'Shaughnessy

Gerrit J Leusink

Shigeru Tahara

Einstein Noel Abarra

Makoto Saito

John Michael David Coey

Doni Parnell

Pat Hughes

Bartlomiej Burkowicz

Saito Makoto

The disclosure describes equipment for magnetic annealing of a substrate, the equipment including: an anneal chamber configured to heat and cool a substrate held at a soak location along a first direction in the anneal chamber, the anneal chamber including: a heater, a cooler, and a substrate lifter including a substrate holder, where the substrate holder is configured to support a substrate oriented such that the first direction is perpendicular to a major surface of the substrate; and a magnet assembly configured to establish a homogeneous zone in the anneal chamber, the soak location being within the homogeneous zone, the homogeneous zone including a region of magnetic field.

Magnetic annealing equipment and method

A method of fabricating a semiconductor device includes placing a semiconductor wafer into a first deposition chamber of a manufacturing platform, the semiconductor wafer comprising a first conductive layer, depositing a dielectric layer on the first conductive layer in the first deposition chamber, placing the semiconductor wafer in a second deposition chamber of the manufacturing platform, and depositing a second conductive layer on the dielectric layer in the second deposition chamber. The method further includes placing the semiconductor wafer into a processing chamber of an electric-field annealer of the manufacturing platform, and in the processing chamber, applying an electrical bias voltage across the dielectric layer by coupling the first conductive layer to a first potential and coupling the second conductive layer to a second potential, and annealing the semiconductor wafer while applying the electrical bias voltage.

Semiconductor manufacturing platform with in-situ electrical bias and methods thereof

A system for processing semiconductor wafers, the system including: a processing chamber; a heat source; a substrate holder configured to expose a semiconductor wafer to the heat source; a first electrode configured to be detachably coupled to a first major surface of a semiconductor wafer; and a second electrode coupled to the substrate holder, the first electrode and the second electrode together configured to apply an electric field in the semiconductor wafer.

Semiconductor processing systems with in-situ electrical bias

A method of fabricating a semiconductor device includes placing a semiconductor wafer into a processing chamber, the semiconductor wafer including a first conductive layer and a second conductive layer separated by an intermediate layer; applying an electrical bias voltage across the intermediate layer by coupling the first conductive layer to a first potential and coupling the second conductive layer to a second potential; and annealing the semiconductor wafer while applying the electrical bias voltage.

Semiconductor processing system with in-situ electrical bias and methods thereof

An apparatus for magnetic annealing one or more workpieces, and a method of operating the apparatus, are described. The apparatus includes: a workpiece holder configured to support one or more workpieces, wherein the one or more workpieces having at least one substantially planar surface; an optional workpiece heating system configured to elevate the one or more workpieces to an anneal temperature; and a magnet assembly having a first magnet and a second magnet, the first and second magnets defining a gap between opposing poles of each magnet, wherein the magnet assembly is arranged to generate a magnetic field substantially perpendicular to the planar surface of the one or more workpieces.

Workpiece magnetizing system and method of operating

A method for performing post-etch annealing of a workpiece in an annealing system is described. In particular, the method includes disposing one or more workpieces in an annealing system, each of the one or more workpieces having a multilayer stack of thin films that has been patterned using an etching process sequence to form an electronic device characterized by a cell critical dimension (CD), wherein the multilayer stack of thin films includes at least one patterned layer containing magnetic material. Thereafter, the patterned layer containing magnetic material on the one or more workpieces is annealed in the annealing system via an anneal process condition, wherein the anneal process condition is selected to adjust a property of the patterned layer containing magnetic material.

Method and system for performing post-etch annealing of a workpiece

Embodiments are described for annealing systems and related methods to process microelectronic workpieces using vertical multi-batch perpendicular magnetic annealing systems that allow for a side-by-side configuration of multiple annealing systems to satisfy reduced footprint requirements.

Vertical multi-batch magnetic annealing systems for reduced footprint manufacturing environments

A device ( ) for generating a variable composite magnetic field comprises top and bottom concentric ring members ( ) which define a main central axis ( ) and a central area ( ) within which the composite magnetic filed is formed. Rod-like permanent magnets are located thin respective annuli ( ) of the respective ring members ( ), and are equi-spaced circumferentially along a pitched circle ( ). The permanent magnets ( ) are rotable about corresponding secondary axes ( ) which extend parallel to each other and parallel to the main central axis ( ). The permanent magnets ( ) are magnetised with their respective direction of magnetisation extending transversely of their secondary axes ( ) and are independently rotatable by corresponding stepper motors ( ) in respective of annuli ( ) of the ring members ( ) for orienting the permanent magnets ( ) about their respective secondary axes ( ) for in turn altering the composite magnetic field generated in the central area ( ).

Device for generating a variable magnetic field

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Dublin, Ireland

David Hurley