International Business Machines Corporation

Micron Technology Incorporated

David Howard Allen

John Edward Sheets, Ii

David Paul Paulsen

Douglas Michael Dewanz

Gregory John Uhlmann

Anthony Gus Aipperspach

Kelly Lynn Williams

John R Tuttle

Robert R Rotzoll

George Edward Pax

Daniel Lawrence Stasiak

Charles K Snodgrass

Francois Ibrahim Atallah

Deepak K Singh

Louis Bernard Bushard

Phil Christopher Felice Paone

Jente Benedict Kuang

Phil Christopher Paone

David Edward Schmitt

Todd Alan Christensen

William Paul Hovis

Ching-Te Kent Chuang

Lew G Chua-Eoan

Charles Luther Johnson

Mary Joseph Saccamango

Roger John Gravrok

Pong-Fei Lu

Kenneth A Van Goor

Mathew I Ringler

Gene Steven Van Grinsven

Timothy Michael Burks

Phil C F Paone

Gregory Allen Wetli

A signaling bus having a plurality of adjacent logical lanes, each logical lane having an odd signal path and an even signal path. Driving circuitry drives each logical lane by transmitting, if data has changed from an immediately preceding cycle, a one cycle signal having a first transition direction on the even signal path on even cycles and transmitting a one cycle signal having the first transition direction on odd cycles. If data has not changed, transmitting a two cycle signal having a second transition direction on the even signal path on even cycles and transmitting a two cycle signal on the odd path having the second transition direction on odd cycles. Receiver circuitry alternates selection of the even cycle path and the odd cycle path to determine if data has changed from the immediately preceding cycle.

Signal transmission reducing coupling caused delay variation

A semiconductor device and method of manufacture are provided. The semiconductor device may include a multiple-patterned layer which may include multiple channels defined by multiple masks. A width of a first channel may be smaller than a width of a second channel. A conductor in the first channel may have a conductor width substantially equivalent to a conductor width of a conductor in the second channel. A spacer dielectric on a channel side may be included. The method of manufacture includes establishing a signal conductor layer including channels defined masks where a first channel may have a first width smaller than a second width of a second channel, introducing a spacer dielectric on a channel side, introducing a first conductor in the first channel having a first conductor width, and introducing a second conductor in the second channel having a second conductor width substantially equivalent to the first conductor width.

Multiple-patterned semiconductor device channels

A semiconductor device and a method of manufacture are provided. The semiconductor device includes one or more layers having channels adapted to carry signals or deliver power. The semiconductor device may include a signal channel and a power channel. The power channel may include power channel cross-sectional portions. A first conductor in the power channel may have a first cross-sectional area. A second conductor in the signal channel may have a second cross-sectional area. The second cross-sectional area may be smaller than the first cross-sectional area. The method of manufacture includes establishing a signal conductor layer including a signal channel and a power channel, introducing a first conductor in the power channel having a first cross-sectional area, and introducing a second conductor in the signal channel having a second cross-sectional area where the second cross-sectional area is smaller than the first cross-sectional area.

Semiconductor device channels

A multiple-patterned semiconductor device and a method of manufacture are provided. The semiconductor device includes a conductive layer. The conductive layer includes conductive tracks which may be defined by photomasks. The conductive tracks may have quality characteristics. Distinct quality characteristics of distinct conductive tracks may be compared. Based on the comparison, signals and supply voltage may be routed on particular conductive tracks.

Semiconductor device with distinct multiple-patterned conductive tracks on a same level

A multiple-patterned semiconductor device and a method of manufacture are provided. The semiconductor device includes one or more layers with signal tracks. The signal tracks have a quality characteristic. The semiconductor device also includes repeater banks to repower signals. The method of manufacture includes defining portions of layers with photomasks having signal track patterns, determining a quality characteristic of the signal track patterns, and selecting a photomask for etching vias.

Signal path and method of manufacturing a multiple-patterned semiconductor device

Method of making semiconductor device with distinct multiple-patterned conductive tracks on a same level

A multiple-patterned semiconductor device is provided. The semiconductor device includes one or more layers with signal tracks defined by masks and a structure for transferring a signal between signal tracks and repowering the signal.

Signal path of a multiple-patterned semiconductor device

A semiconductor device and a method of manufacture are provided. The semiconductor device includes one or more layers having channels adapted to carry signals or deliver power. The semiconductor device may include at least two channels having a substantially equivalent cross-sectional area. Conductors in separate channels may have different cross-sectional areas. A spacer dielectric on a side of a channel may be included. The method of manufacture includes establishing a signal conductor layer including a first channel and a second channel having a substantially equivalent cross-sectional area, introducing a spacer dielectric on a side of the second channel, introducing a first conductor in the first channel having a first cross-sectional area, and introducing a second conductor in the second channel having a second cross-sectional area where the second cross-sectional area is smaller than the first cross-sectional area.

A method and structures are provided for implementing deep trench enabled high current capable bipolar transistor for current switching and output driver applications. A deep oxygen implant is provided in a selected region of substrate. A first deep trench and second deep trench are formed above the deep oxygen implant. The first deep trench is a generally large rectangular box deep trench of minimum width and the second deep trench is a second small area deep trench centered within the first rectangular box deep trench. Ion implantation at relatively high ion pressure and annealing is utilized to form highly doped N+ regions or P+ regions both inside and outside the outside the first deep trench and around the outside the second deep trench region. These regions provide the collector and emitter respectively, and the existing substrate region provides the base region between the collector and emitter regions.

Method for implementing deep trench enabled high current capable bipolar transistor for current switching and output driver applications

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Rochester, MN, United States of America

David Howard Allen