Commissariat a L'energie Atomique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

David Henry

Jean-Charles Souriau

Francois Baleras

Fabrice Casset

Xavier Baillin

Patrice Caillat

Jean Brun

Stéphane Caplet

Adrien Gasse

Christel Dieppedale

Bertrand Chambion

Stephane Fanget

Elisabeth Delevoye

Fabrice Jacquet

Stéphane Fanget

Gerard Barrois

Thierry Enot

Christiane Puget

Alexis Rochas

Remy Dejaeger

François Baleras

Quentin Leclere

Thierry Terrier

The invention relates to a process for collectively bending microelectronic components comprising transferring microelectronic components () to and bending them on curved surfaces () of a shaping carrier (), an adhesive layer () ensuring adhesion of the microelectronic components (), and comprising producing conductive vias () that extend through the shaping carrier () and the adhesive lower layer (), from the lower face () of the shaping carrier (), in order to emerge onto the lower conductive pads () of the microelectronic components ().

Process for collectively bending microelectronic components using shaping carrier

The invention relates to a method for producing a first microelectronic chip including a layer of interest having a connection face, intended to be hybridized with a second microelectronic chip. The method including depositing a layer of adhesive on a face of the layer of interest opposite to the first connection face and fastening a handle layer to the layer of adhesive. The method also includes, prior to the steps of depositing the adhesive and fastening the handle layer, defining, on the one hand, a maximum thickness eand a minimum value Eand a maximum value Eof the Young's modulus for the layer of adhesive, and, on the other hand, the minimum thickness efor the handle layer.

Method for producing a microelectronic chip to be hybridised to a second chip

A digital acoustic device including: at least one suspended diaphragm facing a support and at least one actuator associated with the diaphragm, the associated actuator being configured to move the diaphragm away from and/or closer to the support; a stop mechanism configured to interrupt movement of the diaphragm further to activating the actuator when the diaphragm has a non-zero speed, the stop mechanism being sized to interrupt the movement of the diaphragm when the movement of the diaphragm is greater than or equal to 50% of the theoretical maximum stroke of the diaphragm and lower than or equal to 95% of the theoretical maximum stroke of the diaphragm.

Digital acoustic device with increased sound power

A method for encapsulating a microcomponent positioned on a substrate, including: a) production of an electrical contact pad on the substrate; b) production of a portion of sacrificial material covering the microcomponent and the electrical contact pad; c) production of an encapsulation layer covering the sacrificial material and a first face of the substrate; d) production, through the substrate, of a hole aligned with the electrical contact pad and emerging at the portion of sacrificial material; e) elimination of the portion of sacrificial material through the hole; f) production, in the hole, of a conductive portion electrically connected to the electrical contact pad, forming a conductive via.

Method of encapsulation of a microcomponent

A method of producing an electronic connection device, including: a) formation, in a plane of a support substrate, of at least one first contact element and, in a direction approximately perpendicular to the plane, of at least one second contact element having a first end in electrical contact with the first contact element or elements and a second end, the second contact element or elements including one or more metal tracks standing up along the direction perpendicular to the surface of the substrate; b) then positioning at least one electrical or electronic component in contact with the first contact element or elements; and c) encapsulation of the component(s) and of the first and second contact elements, at least the second end or ends of the second contact element or elements being flush with the surface of the encapsulating material.

Method of producing a via in a reconstituted substrate

A method for producing a structure includes bonding two substrates facing one another by crushing a closed peripheral sealing strip located between the two substrates, the closed peripheral sealing strip delineating a closed cavity between the substrates. A microsystem is disposed on one of the substrates within the closed cavity. Before crushing, the sealing strip includes perforated patterns delineating a plurality of voids inside the strip.

Method for producing a structure

A polymer layer is deposited on a surface of a support, said surface comprising a flat main part and at least one recessed zone with respect to the flat main part. The polymer layer is achieved by at least the following successive steps:

Method for depositing a polymer layer on a surface of a support comprising at least a recessed zone

A method for installing a sorption element in a cavity including: disposing, within the cavity, a getter material, a reaction material, and a protective material, the protective material covering at least one part of the getter material so as to bury the at least one part; raising a temperature up to at least one removal temperature; and moving the protective material towards the reaction material by reaction between the protective material and the reaction material so that at least one portion of the part of the getter material is no longer covered with the protective material.

Thin film getter protection

An electrolytic reactor including a conical recess of removable slices through which the electrolyte circulates towards a part to be coated under the action of a pump setting up forced circulation. The part is polarized to act as a cathode, facing a coaxial anode in the recess. This configuration leads to good electrolyte flow in front of the part, allowing accelerated deposit with a uniform thickness of the coating material, and dimensions of the chamber may be added.

Electrolytic reactor

The process includes the following steps: forming a layer of meltable material (102) on an initial substrate (100); forming a first layer of dielectric material (104) and engraving this layer (104) to form openings (106) therein; forming metal blocks (108) in the openings (106); depositing a metal layer (110) covering the blocks; engraving the metal layer (110) to form conducting tracks (112); forming a layer of dielectric material (114) covering the conducting tracks and engraving this layer (114) to form openings therein; forming metal blocks (118) in these openings; separating the interconnection substrate from the initial substrate by heating the meltable material to a temperature equal to or exceeding its melting temperature.

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Gieres, France

David Henry