Unity Semiconductor Corporation

Multiplanar Technologies Incorporated

Multi Planar Technologyies, Inc.

David Hansen

Jonathan Bornstein

Robin W Cheung

Darrell Rinerson

Jiro Kajiwara

Gerard Moloney

Huey-Ming Wang

Alejandro Reyes

Travis Byonghyop Oh

Steven W Longcor

Lawrence Schloss

Rene Meyer

Memory cell formation using ion implant isolated conductive metal oxide is disclosed, including forming a bottom electrode below unetched conductive metal oxide layer(s), forming the unetched conductive metal oxide layer(s) including depositing at least one layer of a conductive metal oxide (CMO) material (e.g., PrCaMnO, LaSrCoO, LaNiO, etc.) over the bottom electrode. At least one portion of the layer of CMO is configured to act as a memory element without etching, and performing ion implantation on portions of the layer(s) of CMO to create insulating metal oxide (IMO) regions in the layer(s) of CMO. The IMO regions are positioned adjacent to electrically conductive CMO regions in the unetched layer(s) of CMO and the electrically conductive CMO regions are disposed above and in contact with the bottom electrode and form memory elements operative to store non-volatile data as a plurality of conductivity profiles (e.g., resistive states indicative of stored data).

Memory device using ion implant isolated conductive metal oxide

A structure for a memory device including a plurality of substantially planar thin-film layers or a plurality of conformal thin-film layers is disclosed. The thin-film layers form a memory element that is electrically in series with first and second cladded conductors and operative to store data as a plurality of conductivity profiles. A select voltage applied across the first and second cladded conductors is operative to perform data operations on the memory device. The memory device may optionally include a non-ohmic device electrically in series with the memory element and the first and second cladded conductors. Fabrication of the memory device does not require the plurality of thin-film layers be etched in order to form the memory element. The memory element can include a CMO layer having a selectively crystallized polycrystalline portion and an amorphous portion. The cladded conductors can include a core material made from copper.

Continuous plane of thin-film materials for a two-terminal cross-point memory

Memory cell formation using ion implant isolated conductive metal oxide

Chemical mechanical polishing (CMP) of thin film materials using a slurry including a surfactant chemical operative to polish high portions of the film being planarized while preventing the polishing of low portions of the film is disclosed. The low portions can be in a step reduction region of a deposited film. The CMP process can be used for form a planar surface upon which subsequent thin-film layers can be deposited, such as an electrically conductive material for an electrode. The subsequently deposited thin-film layers are substantially planar as deposited without having to use CMP. The resulting thin-film layers are planar and have a uniform cross-sectional thickness that can be beneficial for layers of memory material for a memory cell. The processing can be performed back-end-of-the-line (BEOL) on a previously front-end-of-the-line (FEOL) processed substrate (e.g., silicon wafer) and the BEOL process can be used to fabricate two-terminal non-volatile cross-point memory arrays.

Method of making a planar electrode

In one aspect, the invention provides a method for planarizing a circular disc-type semiconductor wafer or other substrate. The method includes the steps of pressing a retaining ring surrounding the wafer against a polishing pad at a first pressure; pressing a first peripheral edge portion of the wafer against the polishing pad with a second pressure; and pressing a second portion of the wafer interior to the peripheral edge portion against the polishing pad with a third pressure. The second pressure may be provided through a mechanical member in contact with the peripheral edge portion; and the second pressure may be a pneumatic pressure against a backside surface of the wafer. Desirably, the pneumatic pressure is exerted through a resilient membrane, or is exerted by gas pressing directly against at least a portion of the wafer backside surface. A carrier or subcarrier for a CMP apparatus that includes: a plate having an outer surface; a first pressure chamber for exerting a force to urge the plate in a predetermined direction; a spacer coupled to a peripheral outer edge of the plate; a membrane coupled to the plate via the spacer and separated from the plate by a thickness of the spacer; and a second pressure chamber defined between the membrane and the plate surface for exerting a second force to urge the membrane in a third predetermined direction. Substrate, such as a semiconductor wafer, processed or fabricated according to the invention.

System and method for CMP having multi-pressure zone loading for improved edge and annular zone material removal control

An apparatus ( ) and method are provided for polishing a substrate ( ) that achieves a high-planarization uniformity. In one embodiment, the apparatus ( ) includes a subcarrier ( ) with a lower surface ( ), a flexible member ( ) extending across the lower surface, and a control-insert ( ) disposed between the flexible member and the lower surface. The flexible member ( ) has a surface adapted to press the substrate against a polishing pad. The control-insert ( ) inhibits non-planar polishing by providing a variable removal rate across the substrate surface. The control-insert ( ) can be an annular ring ( A) located near an outer edge of the flexible member ( ) to control the removal rate near an edge of the substrate ( ), or a disk ( B) near a center ( ) of the flexible member to control the removal rate near a center of the substrate. The removal rate can be further controlled by varying a cross-sectional thickness of the control-insert ( ).

Chemical mechanical polishing apparatus having edge, center and annular zone control of material removal

An apparatus and method for planarizing a substrate are provided. The apparatus ( ) includes a subcarrier ( ) having an outer surface ( ) with an annular first membrane ( ) coupled thereto. The first membrane ( ) has a receiving surface ( ) adapted to receive the substrate ( ) thereon, and a lip ( ) adapted to seal with a backside of the substrate to define a first chamber ( ) therebetween. A second membrane ( ) positioned above the first membrane ( ), and coupled to the subcarrier ( ) defines a second chamber ( ). During a polishing operation pressurized fluid introduced into the second chamber ( ) causes it to expand outward to exert a force on a portion of the backside of the substrate ( ), thereby pressing a predetermined area ( ) of the surface of the substrate against the polishing pad. The predetermined area ( ) is directly proportional to the pressure of the fluid introduced into the second chamber ( ).

System and method for CMP head having multi-pressure annular zone subcarrier material removal control

A polishing apparatus ( ) and method for polishing and planarizing a substrate ( ) is provided that achieves a high-planarization uniformity across the substrate, while providing a more efficient use of slurry. In one embodiment, the apparatus ( ) includes a subcarrier ( ) with a flexible member ( ) attached to a lower surface ( ) of it on which the substrate is held. The flexible member ( ) has at least one hole ( ) therein so that a pressurized fluid introduced between the flexible member and the subcarrier ( ) directly presses the substrate ( ) against a polishing surface ( ) during operation. The number and size of the holes ( ) are selected to provide sufficient friction between the flexible member ( ) and the substrate ( ) to cause it to rotate when a drive mechanism rotates the subcarrier ( ). In another embodiment, the subcarrier ( ) further includes a port adapted to draw a vacuum on a cavity ( ) between the lower surface ( ) and the flexible member ( ), and the flexible member and the substrate ( ) serve as a valve ( ) to isolate the port from the cavity when a predetermined vacuum has been achieved.

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Palo Alto, CA, United States of America

David Hansen