International Business Machines Corporation

David H Yao

George A Dunbar, Iii

Anthony K Stamper

Arne Watson Ballantine

Andrew Herbert Simon

Edward Crandal Cooney, Iii

Stephen Edward Greco

William Joseph Murphy

Robert Michael Geffken

Nancy Anne Greco

Roger W Cheek

Ronald A Warren

Ronald Dean Goldblatt

Jeffrey D Gilbert

Glenn Robert Miller

Prabhat Tiwari

Frank V Liucci

Cheryl Faltermeier

Bruce A Root

A method of forming a semiconductor device having aluminum lines therein, wherein the occurrence of lateral extrusions and voids are reduced. The method comprises the formation of a metal stack on a surface of the substrate, wherein the aluminum layer of the metal stack is deposited under controlled conditions; etching the metal lines in the metal stack; and exposing the substrate to a subsequent anneal.

Method for controlling extrusions in aluminum metal lines and the device formed therefrom

A method for increasing the production yield of semiconductor devices having copper metallurgy planarized by a chemical-mechanical planarization process which includes a slurry that contains a conductor passivating agent, like benzotriazole, wherein a non-oxidizing anneal is used to remove any residue which might interfere with mechanical probing of conductive lands on the substrate prior to further metallization steps. The anneal may be performed by any of several techniques including a vacuum chamber, a standard furnace or by rapid thermal annealing.

Method of annealing copper metallurgy

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Essex, VT, United States of America

David H Yao