Hewlett-packard Development Company, L.p.

David H McIntyre

Frederick A Perner

Kenneth Kay Smith

Jonathan Jedwab

Stewart R Wyatt

Anthony Peter Holden

Sarah Morris Brandenberger

James Andrew Davis

Terrel Munden

Gadiel Seroussi

Robert Matthew Sesek

Richard Lee Hilton

David Murray Banks

Darrel R Bloomquist

Kenneth Graham Paterson

Steven C Johnson

Connie Lemus

Methods and apparatuses are disclosed for measuring values of a plurality of memory elements, where the measured values may be indicative of the digital state of a memory element. Calculations may be performed on a plurality of transition-terms associated with the possible transitions in the values between proximate memory elements. The digital state of memory elements may be determined using the calculations performed on the plurality of transition-terms.

Methods and apparatuses for determining the state of a memory element

A memory storage device having an address control system is disclosed. The memory storage device includes memory cells and an address control system configured to decode a bit number which identifies a number of the memory cells which are selected in parallel. The memory cells selected in parallel correspond to least significant bits of an address which has a range that includes the memory cells.

Address control system for a memory storage device

A magnetoresistive solid-state storage device (MRAM) employs error correction coding (ECC) to form ECC encoded stored data. In a read operation, parametric values are obtained from storage cellsof the device and compared to ranges to establish logical bit values, together with erasure information. The erasure information identifies symbolsin a block of ECC encoded datawhich, from the parametric evaluation, are suspected to be affected by physical failures of the storage cells. Where the position of suspected failed symbolsis known from this erasure information, the ability of a decoderto perform ECC decoding is substantially enhanced.

Error correction coding and decoding in a solid-state storage device

Embodiments of the present invention provide a magnetic memory. In one embodiment, the magnetic memory comprises an array of memory cells configured to provide resistive states, and a read circuit. The read circuit is configured to sense a resistance through a memory cell in the array of memory cells to obtain a sense result and categorize the sense result into one of at least three different categories comprising a middle category situated between the resistive states.

Magnetic memory including a sense result category between logic states

A magnetic random access memory array includes a data storage layer having an easy axis. A non-linear first conductor is positioned on a first side of the data storage layer, wherein a portion of the first conductor has an angle of orientation that is perpendicular to the easy axis. A non-linear second conductor is positioned on a second side of the data storage layer, wherein a portion of the second conductor also has an angle of orientation that is perpendicular to the easy axis.

MRAM parallel conductor orientation for improved write performance

Systems and methods for reducing the effect of noise while reading data in series from memory, are provided. One system embodiment comprises a memory cell that stores a first data; a sensing device that receives the first data multiple times and provides a first set of outputs; and a voting system that evaluates the first set of outputs to determine whether one of the outputs of the first set is valid data from the memory cell. One method embodiment comprises reading data in series that is stored in a memory cell to provide outputs; and evaluating the outputs to determine whether one of the outputs is valid data from the memory cell.

Systems and methods for reducing the effect of noise while reading data in series from memory

Systems and methods for reducing the effect of noise while reading data from memory, are provided. One system embodiment includes a memory cell that stores a first data; multiple sensing devices that receive the first data and provide a first set of outputs; and a voting system that evaluates the first set of outputs to determine whether one of the outputs of the first set is valid data from the memory cell. One method embodiment includes reading data in parallel that is stored in a memory cell to provide outputs; and evaluating the outputs to determine whether one of the outputs is valid data from the memory cell.

Growing community of inventors

Boise, ID, United States of America

David H McIntyre