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United States of America As Represented by the Administrator of Nasa

David H Franz

Shahid Aslam

Pt/nGaN Schottky barrier diodes are disclosed that are particularly suited to serve as ultra-violet sensors operating at wavelengths below 200 nm. The Pt/nGaN Schottky barrier diodes have very large active areas, up to 1 cm, which exhibit extremely low leakage current at low reverse biases. Very large area Pt/nGaN Schottky diodes of sizes 0.25 cmand 1 cmhave been fabricated from n/nGaN epitaxial layers grown by vapor phase epitaxy on single crystal c-plane sapphire, which showed leakage currents of 14 pA and 2.7 nA, respectively for the 0.25 cmand 1 cmdiodes both configured at a 0.5V reverse bias.

Schottky barrier diode and method thereof

Front and rear springboard assemblies having telescoping members biased apart by springs are provided for attachment at front and rear positions to a skateboard-like deck to provide a springboard device which can be moved forward along a path by successive leaps and bounds. In one embodiment, the assemblies are configured as attachments to be mounted on a conventional skateboard in place of wheeled trucks. In another embodiment, the assemblies are configured to serve as spring-loaded mounts onto which wheeled trucks are attached.

Method for converting skateboard into springboard device

Front and rear springboard assemblies having telescoping members biased apart by springs are provided for atachment at front and rear positions to a skateboard-like deck to provide a springboard device which can be moved foward along a path by successive leaps and bounds. In one embodiment, the assemblies are configured as attachments to be mounted on a conventional skateboard in place of wheeled trucks. In another embodiment, the assemblies are configured to serve as spring-loaded mounts onto which wheeled trucks are attached.

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Orlando, FL, United States of America

David H Franz