Hrl Laboratories, LLC

Hughes Aircraft Company

Hughes Electronics Corporation

Gm Global Technolgoy Operations, Inc.

Url Laboratories, LLC

David H Chow

Joel N Schulman

Rajesh D Rajavel

James Chingwei Li

Tahir Hussain

Marko Sokolich

Ken Elliott

Chanh Nguyen

Andrew T Hunter

Kenneth Robert Elliott

Peter W Deelman

Peter David Brewer

Miroslav Micovic

Wah S Wong

Louis Luh

Mary Y Chen

Yakov Royter

Mehran Mokhtari

Keh-Chung Wang

Stephen Thomas, Iii

Steven S Bui

Don Hitko

Daniel Yap

Jeong-sun Moon

Mark F Mathias

Kyung-Ah Son

Ryan G Quarfoth

Lap Wai Chow

Joseph F Jensen

Adour Vahe Kabakian

Hector J De Los Santos

Authi Ariamuthu Narayanan

Richard Michael Kremer

Minh B Nguyen

Michael W Murphy

Colin G Whitney

Thomas C Hasenberg

Ronald M Hickling

Jeong-Sun Moon

Yi-Ming Xie

Richard H Miles

Yong H Zhang

A reconfigurable optical frequency selective structure having embedded therein:

Electrically-reconfigurable optical device structures with phase change materials

A spatial light modulator cell and arrays of spatial light modulator cells are disclosed. The spatial light modulator cells can comprise a phase change material (PCM) having a first side and a second side; an optical reflector configured to reflect an optical beam passing from the first side to the second side; and a PCM heater thermal conductively coupled to the PCM, wherein thermal modulation of the PCM modulates a phase of the PCM which varies light transmission through the PCM. Methods of making spatial light modulator cells and arrays are also disclosed.

Electrically switchable infrared mirrors using phase-change chalcogenides materials

An infrared detector. The detector includes: a superlattice structure including: at least three first layers; and at least three second layers, alternating with the first layers. Each of the first layers includes, as a major component, InAsP, wherein x is between 0.0% and 99.0%, and each of the second layers includes, as a major component, InAsSb, wherein y is between 0% and 60%.

High quantum efficiency superlattice infrared detector

A heterojunction bipolar transistor (HBT) having an emitter, a base, and a collector, the base including a first semiconductor layer coupled to the collector, the first semiconductor layer having a first bandgap between a first conduction band and a first valence band and a second semiconductor layer coupled to the first semiconductor layer and having a second bandgap between a second conduction band and a second valence band, wherein the second valence band is higher than the first valence band and wherein the second semiconductor layer comprises a two dimensional hole gas and a third semiconductor layer coupled to the second semiconductor layer and having a third bandgap between a third conduction band and a third valence band, wherein the third valence band is lower than the second valence band and wherein the third semiconductor layer is coupled to the emitter.

Modulation doped super-lattice base for heterojunction bipolar transistors

A process for fabricating an integrated group III nitride structure comprising high electron mobility transistors (HEMTs) and Schottky diodes, and the resulting structure, are disclosed. Integration of vertical junction Schottky diodes is enabled, and the parasitic capacitance and resistance as well as the physical size of the diode are minimized. A process for fabricating an integrated group III nitride structure comprising double-heterostructure field effect transistors (DHFETs) and Schottky diodes and the resulting structure are also disclosed.

Integrated structure with transistors and schottky diodes and process for fabricating the same

A semiconductor device and method are being disclosed. The semiconductor device discloses an InAs layer, a plurality of group III-V ternary layers supported by the InAs layer, and a plurality of group III-V quarternary layers supported by the InAs layer, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer. The method discloses providing an InAs layer, growing a plurality of group III-V ternary layers, and growing a plurality of group III-V quarternary layers, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer and are supported by the InAs layer.

Method and device for growing pseudomorphic A1InAsSb on InAs

Material layer structures that have high mobility, a high conduction band barrier and materials that can be implanted to enable higher performance FET device. The structures contain a quantum well layer disposed between two barriers and disposed above a buffer layer and a substrate.

High performance InAs-based devices

Integrated structure with transistors and Schottky diodes and process for fabricating the same

Method and device for growing pseudomorphic AlInAsSb on InAs

A bipolar junction transistor having an emitter, a base, and a collector includes a stack of one or more layer sets adjacent the collector. Each layer set includes a first material having a first band gap, wherein the first material is highly doped, and a second material having a second band gap narrower than the first band gap, wherein the second material is at most lightly doped.

Modulation doped super-lattice sub-collector for high-performance HBTs and BJTs

Electronically tunable and reconfigurable hyperspectral IR detectors and methods for making the same are presented. In one embodiment, a reconfigurable hyperspectral sensor (or detector) detects radiation from about 0.4 &#x3bc;m to about 2 &#x3bc;m and beyond. This sensor is configured to be compact, and lightweight and offers hyperspectral imaging capability while providing wavelength agility and tunability at the chip-level. That is, the sensor is used to rapidly image across diverse terrain to identify man-made objects and other anomalies in cluttered environments.

Electronically tunable and reconfigurable hyperspectral photon detector

A fuel cell system that employs a diode electrically coupled between bipolar plates in a fuel cell of a fuel cell stack for preventing the fuel cell between the plates from reversing its polarity. The diode is a thin-sheet p-n diode including doped semiconductor layers and has a thickness relative to the thickness of the MEA in the fuel cell so that the overall stack thickness does not increase. When the fuel cell is operating properly the diode does not conduct and all of the current through the fuel cell goes through the MEA. If the electric load on the stack increases to a level beyond the capability of the fuel cell, where the potential across the fuel cell goes significantly below zero, the diode will begin to conduct so that any current that cannot travel through the MEA with the cell voltage less than one negative forward diode voltage drop is able to go around the MEA through the diode.

Integration of an electrical diode within a fuel cell

A semiconductor device exhibiting interband tunneling with a first layer with a first conduction band edge with an energy above a first valence band edge, with the difference a first band-gap. A second layer with second conduction band edge with an energy above a second valence band edge, with the difference a second band-gap, and the second layer formed permitting electron carrier tunneling transport. The second layer is between the first and a third layer, with the difference between the third valence band edge and the third conduction band edge a third band-gap. A Fermi level is nearer the first conduction band edge than the first valence band edge. The second valence band edge is beneath the first conduction band edge. The second conduction band edge is above the third valence band edge. The Fermi level is nearer the third valence band edge than to the third conduction band edge.

Type II interband heterostructure backward diodes

Growing community of inventors

Newbury Park, CA, United States of America

David H Chow