Applied Materials, Inc.

David Gunther

Kirankumar Neelasandra Savandaiah

Jiao Song

Anthony Chih-Tung Chan

Irena H Wysok

Madan Kumar Shimoga Mylarappa

Keith A Miller

Martin Lee Riker

Prashanth Kothnur

Siew Kit Hoi

Cheng-Hsiung Matthew Tsai

Alexander Jansen

Emily Schooley

Cheng-Hsiung Matt Tsai

William R Johanson

Prashant Prabhakar Prabhu

Nuno Yen-Chu Chen

Mengxue Wu

Yue Cui

Apparatus and methods for controlling plasma profiles during PVD deposition processes are disclosed. Some embodiments utilize EM coils placed above the target to control the plasma profile during deposition.

EM source for enhanced plasma control

Deposition ring for physical vapor deposition chamber

Embodiments of a process kit are provided herein. In some embodiments, a process kit includes a deposition ring configured to be disposed on a substrate support, the deposition ring including an annular band configured to rest on a lower ledge of the substrate support, the annular band having an upper surface and a lower surface, the lower surface including a step between a radially inner portion and a radially outer portion; an inner lip extending upwards from the upper surface of the annular band and adjacent an inner surface of the annular band, wherein a depth between an upper surface of the annular band and a horizontal portion of the upper surface of the inner lip is between about 6.0 mm and about 12.0 mm; a channel disposed radially outward of and beneath the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.

Process kit having tall deposition ring for PVD chamber

An apparatus leverages a physical vapor deposition (PVD) process chamber with a wafer-to-target distance of approximately 400 millimeters to deposit tantalum film on through silicon via (TSV) structures. The PVD process chamber includes a source that is configured with dual magnet source compensation. The PVD chamber also includes an upper electromagnet assembly exterior to the chamber body in close proximity to the source, a magnetron assembly in the source including dual magnets with dual radius trajectories, a shield within the chamber body, and a plurality of grounding loops that are symmetrically spaced about a periphery of a substrate support assembly and are configured to provide an RF ground return path between the substrate support assembly and the shield.

Methods and apparatus for extended chamber for through silicon via deposition

Target profile for a physical vapor deposition chamber target

Embodiments of deposition rings for use in a process chamber are provided herein. In some embodiments, a deposition ring includes: an annular body; an inner wall extending upward from an inner portion of the annular body; and an outer wall extending upward form an outer portion of the annular body to define a large deposition cavity between the inner wall and the outer wall, wherein a width of the large deposition cavity is about 0.35 inches to about 0.60 inches, wherein the outer wall includes an outer ledge and an inner ledge raised with respect to the outer ledge.

Low profile deposition ring for enhanced life

Embodiments of process kits are provided herein. In some embodiments, a process kit, includes: a deposition ring configured to be disposed on a substrate support, the deposition ring comprising: an annular band having an upper surface and a lower surface, the lower surface including a step between a radially inner portion and a radially outer portion, the step extending downward from the radially inner portion to the radially outer portion; an inner lip extending upwards from the upper surface of the annular band and adjacent an inner surface of the annular band, and wherein an outer surface of the inner lip extends radially outward and downward from an upper surface of the inner lip to the upper surface of the annular band; a channel disposed radially outward of the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.

Process kit having tall deposition ring and smaller diameter electrostatic chuck (ESC) for PVD chamber

Methods and apparatus for cleaning an electrostatic chuck (ESC) in a semiconductor chamber allow in-situ cleaning of the ESC. An apparatus may include an adapter or cover ring that is electrically isolated from a deposition ring; an annular grounding bracket mounted to and surrounding a pedestal, the annular grounding bracket has at least one horizontal grounding loop on an upper perimeter surface configured to provide electrical contact with the adapter or cover ring and to provide an RF return path to the ESC during plasma generation; and a bracket with a horizontal grounding loop on a first end to make electrical contact with the deposition ring and a vertical grounding loop on a second end to make electrical contact with a lift hoop which is electrically grounded, the bracket is mounted to, but electrically isolated from, the annular grounding bracket.

Methods and apparatus for in-situ cleaning of electrostatic chucks

Methods and apparatus for processing a substrate are provided herein. In embodiments, a magnetron assembly for use in a PVD chamber includes: a base plate having a first side, a second side opposite the first side, and a central axis; a magnet plate rotatably coupled to the base plate, wherein the magnet plate rotates with respect to the base plate about an offset axis; a magnet assembly coupled to the magnet plate offset from the offset axis and configured to rotate about the central axis and the offset axis; a first motor coupled to the base plate to rotate the magnet assembly about the central axis; and a second motor coupled to the magnet plate to control an angular position thereof and to position the magnet assembly in each of a plurality of fixed angular positions defining a plurality of different fixed radii.

Multi-radius magnetron for physical vapor deposition (PVD) and methods of use thereof

Deposition ring for a semiconductor processing chamber

Sputtering target for a physical vapor deposition chamber

Growing community of inventors

San Jose, CA, United States of America

David Gunther