Butterfly Network, Inc.

Analog Devices,inc.

Bfly Operations, Inc.

David Grosjean

Keith Glen Fife

Susan A Alie

Joseph Lutsky

Jonathan Marc Rothberg

Thomas Kieran Nunan

James S Sellars

Denis M O'Kane

An ultrasonic transducer includes a membrane, a bottom electrode, and a plurality of cavities disposed between the membrane and the bottom electrode, each of the plurality of cavities corresponding to an individual transducer cell. Portions of the bottom electrode corresponding to each individual transducer cell are electrically isolated from one another. Each portion of the bottom electrode corresponds to each individual transducer that cell further includes a first bottom electrode portion and a second bottom electrode portion, the first and second bottom electrode portions electrically isolated from one another.

Microfabricated ultrasonic transducer having individual cells with electrically isolated electrode sections

Processes for fabricating capacitive micromachined ultrasonic transducers (CMUTs) are described, as are CMUTs of various doping configurations. An insulating layer separating conductive layers of a CMUT may be formed by forming the layer on a lightly doped epitaxial semiconductor layer. Dopants may be diffused from a semiconductor substrate into the epitaxial semiconductor layer, without diffusing into the insulating layer. CMUTs with different configurations of N-type and P-type doping are also described.

Capacitive micromachined ultrasonic transducers (CMUTs) and related apparatus and methods

A method of manufacturing MEMS structures and devices that allows the fabrication of dielectric structures with improved etch selectivity and good electrical leakage characteristics. The dielectric structure includes a composite stack of silicon nitride sub-layers with a silicon-rich nitride sub-layer and a stoichiometric silicon nitride sub-layer at opposite ends of the stack. Alternatively, the dielectric structure includes a single silicon nitride layer providing a graded change in silicon content through the dielectric layer, from silicon-rich nitride to stoichiometric silicon nitride.

Composite dielectric with improved etch selectivity for high voltage MEMS structures

Growing community of inventors

Holliston, MA, United States of America

David Grosjean