Lucent Technologies Inc.

Infinera Corporation

Agere Systems Guardian Corp.

Triquint Technology Holding Co.

At&t Bell Laboratories

Agere Systems Inc.

David Gerald Coult

Gustav Edward Derkits, Jr

Timothy Butrie

Jie Tang

Xiaofeng Han

Donald J Pavinski

John William Osenbach

Peter Weindel Evans

Mehrdad Ziari

Vikrant Lal

Michael Reffle

Franklin Roy Dietz

Fred A Kish, Jr

Charles William Lentz

William L Emkey

Michele A Milbrodt

David Angst

Bryan Phillip Segner

Brian Stauffer Auker

Duane Donald Wendling

Radhakrishnan L Nagarajan

Walter Jeffrey Shakespeare

Jiaming Zhang

Joseph Edward Riska

Bernard Caras

Joze E Antol

Yiu-Man Wong

Frederick Arthur Yeagle

Nur Selamoglu

Alka G Swanson

Ranjani C Muthiah

Bryan P Segner

Joel C Masland

Curtis A Jack

Debra L Waltemyer

Gustav E Derkits

Fred A Klsh, Jr

Sonja Radelow

Wan-ning Wu

A device may include a substrate. The device may include a carrier mounted to the substrate. The device may include a transmitter photonic integrated circuit (PIC) mounted on the carrier. The transmitter PIC may include a plurality of lasers that generate an optical signal when a voltage or current is applied to one of the plurality of lasers. The device may include a first microelectromechanical structure (MEMS) mounted to the substrate. The first MEMS may include a first set of lenses. The device may include a planar lightwave circuit (PLC) mounted to the substrate. The PLC may be optically coupled to the plurality of lasers by the first set of lenses of the first MEMS. The device may include a second MEMS, mounted to the substrate, that may include a second set of lenses, which may be configured to optically couple the PLC to an optical fiber.

Hybrid optical transmitter and/or receiver structure

Consistent with the present disclosure, an apparatus for producing a control signal for a laser source is provided, comprising an etalon configured to receive light from the laser source and control circuitry that provides the control signal, wherein the control signal is indicative of a comparison of (a) a difference between a forward transmission signal of the etalon and a backward reflection signal of the etalon and (b) the light received by the etalon from the laser source. Alternatively, the control signal is indicative of a comparison of (a) a difference between a forward transmission signal of the etalon and a backward reflection signal of the etalon and (b) a combination of the forward transmission signal of the etalon and the backward reflection signal of the etalon. Also consistent with the present disclosure, a method of aligning an etalon-based wavelength locking apparatus is provided, wherein the etalon of the apparatus is aligned with an optical axis along a direction of propagation of the output of the laser source by monitoring the signals indicative of the forward transmission signal and the backward reflection signal of the etalon.

Etalon-based wavelength locking apparatus and alignment method

A photonic transmitter, comprises a modulator driver having a first and second output ports, a photonic integrated transmitter circuit having a modulator having a first and a second input line, and a first input port electrically coupled with the first input line and a second input port electrically coupled with the second input line, and an interconnect bridge assembly, including a first termination resistor, a second termination resistor, and a substrate. An impedance-controlled transmission structure is formed in the substrate, and has: (a) an impedance control section including a first and a second signal lines electrically insulated from one another; and (b) a transmission section including a third and a fourth signal line coupled with termination resistor. The interconnect bridge assembly transmits an impedance controlled differential electrical signal from the modulator driver to the modulator, and transmits the electrical signal from the modulator to the first and second termination resistors.

Interconnect bridge assembly for photonic integrated circuits

An improved method and solder composition for kinetically controlled part bonding. The method involves applying at least a first chemical element layer of an intermetallic compound to a first part and applying at least a second chemical element layer of the intermetallic compound to a second part. The first and second parts are placed together so that the chemical element layers contact each other. The parts are heated from a storage temperature to a bonding temperature which is slightly above a first melting temperature that melts the chemical element layer of one of the first and second parts into a liquid mixture. The composition of liquid mixture varies with time during heating due to the formation of the intermetallic compound therein by progressive incorporation of the other one of the first and second chemical element layers into the mixture. The melting temperature of the liquid mixture increases with time as the composition changes until the melting temperature of the liquid mixture is about equal to the bonding temperature thereby soldifying the liquid mixture into a bond. The parts are then held at a holding temperature which is higher than the storage temperature to maintain diffusion of the other one of the first and second chemical element layers into the bond. This forms a quantity of the intermetallic compound in the bond which is sufficient to raise the melting temperature of the bond to a desired usage temperature that is substantially above the first melting temperature. The intermetallic compound is typically composed of a ternary solder composition.

Kinetically controlled solder

The present invention provides an optoelectronic device that includes an optical active layer formed over a substrate and an active region formed in the optical active layer. The optoelectronic device further includes a P-contact and an N-contact formed over a same side of the substrate and associated with the active region, the N-contact is located within a trench formed in the optical active layer and contacts the substrate within the trench.

Optoelectronic device having a P-contact and an N-contact located over a same side of a substrate and a method of manufacture therefor

A barrier layer is formed within a microfabricated device, such as a semiconductor laser assembly. The barrier layer is used to separate bonding material from an underlying layer that is located beneath the barrier layer. The barrier layer includes at least three thin layers that have alternating levels of electronegativity. Therefore, a significant amount of intermetallics are formed between the thin layers, thereby creating strong bonds between the thin layers at relatively low temperatures. It is difficult for the bonding material to break the strong bonds of the thin layers, and the bonding material is, therefore, prevented from penetrating the barrier layer and reacting with the underlying layer.

Barrier layer and method of making the same

A method of calibrating an interferometer system and a multilayer thin film used for calibrating the interferometer system. The method including measuring the step height of a gold step with the interferometer system, the multilayer thin film comprising a gold layer that defines the gold step. The multilayer thin film having an optical flat, a first layer on the surface of the optical flat, a second layer on the first layer, a test layer on a part of the second layer, and a gold layer on the test layer and on a part of the second layer uncovered by the test layer. The test layer having a test layer step, and the gold layer having a gold step over the test layer step. Also, a reference standard and a method of making the reference standard for a thin film sample with one or more component thin film layers, the reference standard having a gold layer over the surface of the thin film sample.

Method of thin film process control and calibration standard for optical profilometry step height measurement

A system for measuring the thickness of a wafer while it is being thinned this disclosed. The system and method provide integrating an optical reflectometer into a common wafer thinning apparatus. Using reflected optical signals from the top and bottom of the wafer, the thickness of the wafer is determined with time based calculations in real-time while thinning is occurring. Once the desired thickness has been reached, the thinning operation is halted. By performing the measurement in-situ, this system and a method prevent scrapping of wafers which are overthinned and the reloading of wafers which are too thick. Since an optical reflectometer is used, the measurement is contactless, and thus prevents possible damage to wafers during measurement.

In-situ automated contactless thickness measurement for wafer thinning

Kinetically controlled solder bonding

Optical components, such as optical semi-isolators, are placed in a fixture that exposes at least a portion of the mounting surface of each optical component when a plasma or ion beam is directed at one side of the fixture, while shielding sensitive surfaces of the optical components (e.g., an optical element mounted within the frame of the optical component) from direct exposure to the plasma or ion beam. Exposure to the plasma or ion beam removes contaminants (e.g., metal oxide) that form on the mounting surface during the fabrication of the optical components when the optical element is mounted within its frame using glass solder in a heated oxygenated environment (e.g., air). By removing enough of the contaminants, the plasma or ion beam cleaning step produces optical components that can be reliably mounted onto substrates, such as the ceramic substrates used in encapsulated laser packages, using flux-less auto-bonding techniques.

Fixture with at least one trough and method of using the fixture in a plasma or ion beam

Compliant standoffs are disposed on a support surface of a semiconductor or hybrid semiconductor device. The standoffs extend further from the support surface than other active or passive structures associated with the (hybrid) semiconductor device, and are spaced at least a minimum distance from such associated structures. Each compliant standoff provides a surface at which auxiliary devices, such as optical subassemblies, lightwave circuits and the like, can be attached. Since the compliant standoffs extend further from the support surface than other associated structures, such other associated structures are protected from potentially damaging contact with the auxiliary device(s) being attached to the compliant standoffs. Moreover, since the compliant standoffs are spaced from such other asociated structures, potentially damaging thermal and mechanical stresses (imparted to the standoffs as a result of the contact with an auxiliary device such as during bonding) are substantially dissipated by the compliant standoff and directed into the support rather than the other associated structures. The compliant standoffs advantageously comprise conductive materials such that they may be placed in ohmic electrical contact with at least one active region of the (hybrid) semiconductor device.

Article comprising a standoff complaint metallization and a method for making same

The specification describes an analytical technique for determining trace levels of copper in a background matrix of titanium by dissolving the titanium and the copper impurity in HF, then selectively depositing the copper on a clean silicon surface. The silicon surface is then analyzed for the trace level of copper.

Detecting trace levels of copper

An improved method and composition for achieving a kinetically-controlled solder bond is disclosed having particular application to the fabrication of hybrid integrated circuits and optical subassemblies. The method involves the use of a solder layer, a quenching layer, and a control layer disposed between the solder layer and quenching layer, in which the control layer is advantageously comprised of a thin film of platinum. Additionally, a barrier layer, also preferably comprised of a thin film of platinum, is disposed between the solder layer and the parts to be bonded to prevent the oxidation of solder materials during the soldering process or later storage of the soldered parts.

Method and compositions for achieving a kinetically controlled solder

Growing community of inventors

Bechtelsville, PA, United States of America

David Gerald Coult