Spansion Llc.

Advanced Micro Devices Corporation

Fasl LLC

Spanson LLC

Spansion LLC Advanced Micro Devices, Inc

David Gaun

Swaroop Kaza

Stuart Spitzer

Juri Krieger

Colin Stewart Bill

Richard Paul Kingsborough

Igor Sokolik

Michael Allen Van Buskirk

Eugen Gershon

Tzu-Ning Fang

Wei Daisy Cai

Suzette Keefe Pangrle

Alexander H Nickel

Zhida Lan

Xiaobo Shi

Nicolay F Yudanov

Jean Wu

Improving memory retention properties of a polymer memory cell are disclosed. The methods include providing a semiconducting polymer layer containing at least one organic semiconductor and at least one of a carrier ion oxidation preventer and an electrode oxidation preventer. The oxidation preventers may contain at least one of 1) an oxygen scavenger, 2) a polymer with oxidizable side-chain groups which can be preferentially oxidized over the carrier ions/electrodes, and 3) an oxidizable molecule that can be preferentially oxidized over the carrier ions/electrodes.

Prevention of oxidation of carrier ions to improve memory retention properties of polymer memory cell

A memory cell made of at least two electrodes with a controllably conductive media between the at least two electrodes is disclosed. The controllably conductive media includes a passive layer made of super ionic material and an active layer. When an external stimuli, such as an applied electric field, is imposed upon the first and second electrode, ions move and dope and/or de-dope the polymer. The applied external stimuli used to dope the polymer is larger than an applied external stimuli to operate the memory cell. The polymer functions as a variable breakdown characteristic diode with electrical characteristics which are a consequence of the doping degree. The memory element may have a current limited read signal. Methods of making the memory devices/cells, methods of using the memory devices/cells, and devices such as computers, hand-held electronic devices and memory devices containing the memory cell(s) are also disclosed.

Variable breakdown characteristic diode

Systems and methods are disclosed that facilitate extending data retention time in a data retention device, such as a nanoscale resistive memory cell array, via assessing a resistance level in a tracking element associated with the memory array and refreshing the memory array upon a determination that the resistance of the tracking element has reached or exceeded a predetermined reference threshold resistance value. The tracking element can be a memory cell within the array itself and can have an initial resistance value that is substantially higher than an initial resistance value for a programmed memory cell in the array, such that resistance increase in the tracking cell will cause the tracking cell to reach the threshold value and trigger refresh of the array before data corruption/loss occurs in the core memory cells.

Use of periodic refresh in medium retention memory arrays

The present invention is a method of undertaking a procedure on a memory-diode, wherein a memory-diode is provided which is programmable so as to have each of a plurality of different threshold voltages. A reading of the state of the memory-diode indicates the so determined threshold voltage of the memory-diode.

Utilization of memory-diode which may have each of a plurality of different memory states

The present memory device has first and second electrodes, a passive layer between the first and second electrodes and on and in contact with the first electrode, and an active layer between the first and second electrodes and on and in contact with the passive layer and second electrode, for receiving a charged specie from the passive layer. The active layer is a mixture of (i) a first polymer, and (ii) a second polymer for enhancing ion transport, improving the interface and promoting a rapid and substantially uniform distribution of the charged specie in the active layer, i.e., preventing a localized injection of the charged species. These features result in a memory element with improved stability, a more controllable ON-state resistance, improved switching speed and a lower programming voltage.

Memory element using active layer of blended materials

Systems and methodologies are provided for adjusting threshold associated with a polymer memory cell's operation by applying thereupon a regulated electric field and/or voltage pulse width, during a post fabrication stage. Such customization of programming thresholds can typically be obtained at any cycle of programming the memory cell, to increase flexibility in circuit design. Accordingly, the present invention supplies both a current-voltage domain, and/or a frequency-time domain, to facilitate adjusting the program thresholds of the polymer memory cell.

Systems and methods for adjusting programming thresholds of polymer memory cells

The present invention is a method of programming a memory device, wherein different levels or magnitudes of current may be applied to and imposed on the memory device so that any one of a plurality of memory states may be realized. A read step indicates the so determined state of the memory device.

Method of programming a memory device

Systems and methodologies are provided for activating a polymer memory cell(s) after production by subjecting the polymer memory cell to an electrical field, for an initialization thereof. Such initialization can facilitate the distribution and mobility of metal ions (or charged metallic molecules) within an active layer of the polymer memory cell. The memory cell can include various layers of alternating passive and active media, which are sandwiched between conducting electrode layers.

Polymer memory cell operation

The present memory structure includes first and second electrodes, a passive layer, and an active layer containing nitrogen, the passive and active layers being between the first and second electrodes. Metal ions in the active layer bind to the nitrogen thereof, enhancing retention of the metal ions in the active layer for improved, stable data retention.

Memory element with nitrogen-containing active layer

Systems and methodologies are provided for simplifying a polymer memory cell's operation by employing a post polymer growth treatment to form ionic or super ionic metal compounds therein. Such post polymer growth treatment facilitates distribution and mobility of metal ions (or charged metallic molecules) within an active layer of the polymer memory cell, and mitigates (or eliminates) a need for initialization procedures. Moreover, the post treatment of the present invention can also facilitate controlling a distribution of various thresholds (e.g., write and erase threshold), and set them to predetermined values Accordingly, variability in threshold values of polymer memory cells that can result from initialization processes can be mitigated (or eliminated), and thicker polymer layers can be employed without an initialization penalty.

Method to improve yield and simplify operation of polymer memory cells

A memory element includes a first electrode, a passive layer on and in contact with the first electrode, a polyfluorene active layer on and in contact with the active layer, and a second electrode on and in contact with the polyfluorene active layer. The chemical structure of the polyfluorene active layer may be altered to take different forms, each providing a different memory element operating characteristic.

Memory elements using organic active layer

A test system having a feedback loop that facilitates adjusting an output test waveform to a DUT/CUT (Device Under Test/Circuit Under Test) on-the-fly according to changing DUT/CUT parameters. The system includes a tester having an arbitrary waveform generator (AWG) and a data acquisition system (DAS) that monitors the status of the DUT/CUT. The AWG and DAS connect to the DUT/CUT through a feedback loop where the AWG outputs the test waveform to the DUT/CUT, the DAS monitors the DUT/CUT parameters, and the DAS analyzes and communicates changes to the AWG to effect changes in the output waveform, when desired. The AWG builds the output waveform in small slices (or segments) that are assembled together through a process of selection and calibration. The feedback architecture facilitates a number of changes in the output waveform, including a change in the original order of the preassembled slices, and changes in the magnitude/shape of the output waveform.

Growing community of inventors

Brookline, MA, United States of America

David Gaun