Stmicroelectronics (rousset) Sas

Stmicroelectronics (crolles 2) Sas

Stmicroelectronics (grenoble 2) Sas

David Galpin

Philippe Boivin

Olivier Weber

Laurent Favennec

Jean-Pierre Oddou

Olivier Hinsinger

Franck Arnaud

Philippe Brun

Stephane Zoll

Lucile Broussous

Pierre Morin

Stéphane Zoll

An integrated circuit includes a substrate with an active area, a first insulating layer, a second insulating layer, and a phase-change material. The integrated circuit further includes a heating element in an L-shape, with a long side in direct physical contact with the phase-change material and a short side in direct physical contact with a via. The heating element is surrounded by first, second, and third insulating spacers, with the first insulating spacer having a planar first sidewall in contact with the long side of the heating element, a convex second sidewall, and a planar bottom face in contact with the short side of the heating element. The second and third insulating spacers are in direct contact with the first insulating spacer and the long side of the heating element.

Chip containing an onboard non-volatile memory comprising a phase-change material

An electronic chip includes memory cells made of a phase-change material and a transistor. First and second vias extend from the transistor through an intermediate insulating layer to a same height. A first metal level including a first interconnection track in contact with the first via is located over the intermediate insulating layer. A heating element for heating the phase-change material is located on the second via, and the phase-change material is located on the heating element. A second metal level including a second interconnection track is located above the phase-change material. A third via extends from the phase-change material to the second interconnection track.

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Le Cheylas, France

David Galpin