Intel Corporation

David Fryer

Vivek K Singh

Mansour Moinpour

Ming-Chuan Yang

Martin Weiss

Nikolay Suetin

William T Blanton

Alex Tregub

Alex A Granovsky

Thanh N Phung

Brian Kinnear

Telly Koffas

Two acids may be formed per exposed photon using free radical promotion so that two acid products are produced via two parallel pathways. This results in increased fabrication facility throughput. In some embodiments, this may be achieved while reducing side-lobe defect liability.

Increasing photoresist processing throughput

In one embodiment, a wafer alignment system, comprises a radiation source to generate radiation, a radiation directing assembly to direct at least a portion of the radiation onto a surface of a wafer, the radiation having a polarization state, an optical analyzer to collect at least a portion of the radiation reflected from the wafer, the wafer including at least a first region having a first grating pattern oriented in a first direction and at least a second region having a second grating pattern oriented in a second direction, different from the first direction.

Wafer level alignment structures using subwavelength grating polarizers

Thermally analysis of layers and multiple layer structures used in the semiconductor processing arts is disclosed. A modulated calorimetric analysis may be used to determine a thermal signature that characterizes the chemical properties of a sample of material. The signature may include one or more thermal properties such as heat capacities. The signature may be used to compare and infer the suitability of a material for use in an integrated circuit manufacturing process. A thermal signature for a material that is not known to be suitable for manufacturing integrated circuits may be compared with a thermal signature for a standard material that is known to be suitable in order to determine whether the aforementioned material is suitable. Multiple layer structures may also be analyzed, compared, and inferred, and approaches for determining thermal signatures for any individual layer of the multiple layer structure are disclosed.

Thermal analysis and characterization of layers and multiple layer structures

A proximity correction tool receives an indication of a feature in a lithographic design. The proximity correction tool predicts a film edge placement for the feature in a resist film based at least in part on thermal proximity effects in the resist film.

Thermal proximity effects in lithography

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Hillsboro, OR, United States of America

David Fryer