Kilopass Technology, Inc.

Kilopass Technologies, Inc.

Via Technologies, Inc.

Klp International, Ltd.

Chengdu Kiloway Electronics Inc.

Silicon Storage Technology, Inc.

Sichuan Kiloway Electronics Inc.

David Fong

Jack Zezhong Peng

Jianguo Wang

Fei Ye

Harry Luan

Glen Arnold Rosendale

Michael David Fliesler

Zhongshang Liu

Zheng (Joy) Zhang

Qi (Christine) Chen

Stanley John

Zhongshan Liu

Gang Miao

A non-volatile memory cell using two transistors, a bit select and a sense device and an antifuse device. The antifuse device is implemented with a field-effect transistor operated to behave like an antifuse when the cell is selected and a modest programming voltage under 5.5 volts and a current under 5-&#x3bc;A is applied. Only a soft breakdown is needed in the thin gate oxide because a local sense transistor is used during read operations to detect the programming and amplify it for column sense amplifiers. Reading also only requires low voltages of about one volt.

Soft breakdown mode, low voltage, low power antifuse-based non-volatile memory cell

A method and fixture using magnetic field assisted self-alignment for chip packaging. Typical embodiments include a magnetic device having one or more pole groups, each pole group including two or three poles. Some embodiments provide multiple pole groups arranged in a one or two dimensional pole group array. The poles can build up a self-alignment magnetic field. The structure of fixture is simple and easy to implement. Typical embodiments can greatly reduce chip packaging cost and make packaging more efficient. In accordance with typical embodiments, a chip and a substrate can be self-aligned magnetically regardless of their shapes.

Chip packaging fixture using magnetic field for self-alignment

A memory cell has at least two word lines and at least two bit lines. The cell also has a first select device being connected to at least one word line and one bit line and a gate capacitor element connected to at least one word line and the first select device. The cell also has a sense device being connected in series to the gate capacitor element and the first select device. The sense device is connected to at least two bit lines.

Low voltage and low power memory cell based on nano current voltage divider controlled low voltage sense MOSFET

Included are embodiments of a description language program stored in a computing device for updating a first version of a computer program. In at least one embodiment, the first version of the computer program is written in a universal format and the program includes logic configured to receive an updated version of the computer program. Other embodiments include logic configured to retrieve the first version of the computer program and logic configured to translate the updated version of the computer program from a proprietary format to the universal format. Still other embodiments include logic configured to utilize at least one tag to compare the translated updated version of the computer program with the first version of the computer program.

Programming language translation systems and methods

One-time programmable (OTP) nonvolatile fuse memory cells are disclosed that do not require decoding or addressing for reading their data content. Each fuse memory cell has its content latched at its output and available at all times and can be used, for example, for code storage memories, serial configuration memories, and as individual fuse bits for ID (identification), trimming, and other post-fabrication System-on-Chip (SoC) customization needs. Means are also provided for temporary data storage for design testing, etc. In alternative embodiments, using two differentially programmed fuses in a single memory cell, the selection and programming circuitry are merged.

Electrically programmable fuse bit

One-time programmable (OTP) nonvolatile fuse memory cells are disclosed that do not require decoding or addressing for reading their data content. Each fuse memory cell has its content latched at its output and available at all times and can be used, for example, for code storage memories, serial configuration memories, and as individual fuse bits for ID (identification), trimming, and other post-fabrication System-on-Chip (SoC) customization needs.

Provided are systems for repairing an integrated circuit device. The systems include detection logic configured to locate a defective portion of an integrated circuit device, a supplemental integrated circuit component configured to functionally replace the defective portion, and logic configured to identify an interface location. Also provided are methods for repairing an integrated circuit device. The methods include the steps of: identifying a defective portion of an integrated circuit device; disconnecting existing circuit components; and incorporating a supplemental integrated circuit component with the integrated circuit device.

Methods and systems for repairing an integrated circuit device

Methods and apparatus for decreasing oxide stress and increasing reliability of memory transistors are disclosed. Duration and frequency of exposure of memory transistor gates to read signals are significantly reduced. In some embodiments, after a short read cycle, the content of the memory cell is latched and maintained as long as the subsequent read attempts are directed to the same memory cell. In these embodiments the read cycle need only be long enough to latch the memory content of the cell, and as long as the subsequent read attempts target the same memory cell the latched value will be used instead of repeating the read process.

Memory transistor gate oxide stress release and improved reliability

Memory cells including an SRAM and an OTP memory unit that combine the advantages of both technologies and can be fabricated by standard CMOS manufacturing without additional masking. The concepts and details may be applied to and utilized in other systems requiring memory and/or employing other fabrication technologies. Among other advantages, the SRAM part of memory cells allows countless programming of the cell, which is useful, for example, during the prototyping. The OTP part is utilized to permanently program the memory cell by either using external data or the data already existing in the SRAM part of the cell. The value held by the OTP unit may also be written directly into the SRAM part of the cell.

Memory cell comprising an OTP nonvolatile memory unit and a SRAM unit

A method is provided for merging assertions in one input file with hardware description language (HDL) code in another input file to produce an HDL output file. One embodiment, among others, comprises the steps of: copying an assertion identified by an assertion identifier from the first input file; locating a matching assertion identifier within a section of the second input file; and merging the assertion with the section of the second input file to produce a section in the HDL output file.

Merging a hardware design language source file with a separate assertion file

A cell that can be used as a dynamic memory cell for storing data used in programming a field programmable gate array (FPGA) is disclosed. The cell comprises a select transistor having a gate, a source, and a drain, the gate connected to said write bitline, the source connected to a floating point node, and the drain connected to a row wordline. A sense device determines the data stored on the floating point node. Finally, switch that is controlled by the floating point node is provided.

Combination field programmable gate array allowing dynamic reprogrammability

A method of programming a memory cell is disclosed. The memory cell comprises a select transistor and a data storage element. The method comprises allowing current to flow through the data storage element until a predetermined current or voltage is detected. If the current or voltage exceeds a threshold, then the programming is deemed complete.

Methods and circuits for programming of a semiconductor memory cell and memory array using a breakdown phenomenon in an ultra-thin dielectric

A method of testing the programmability of a memory cell is disclosed. The memory cell comprises a select transistor and a data storage element. The method comprises applying a test voltage across the data storage element. The select transistor is turned on. Finally, a current flow through the data storage element when the test voltage is applied is measured. A test positive signal is indicated if the current flow is greater than a reference.

Methods and circuits for testing programmability of a semiconductor memory cell and memory array using a breakdown phenomenon in an ultra-thin dielectric

A programmable memory cell comprised of a transistor located at the crosspoint of a column bitline and a row wordline is disclosed. The transistor has its gate formed from the column bitline and its source connected to the row wordline. The memory cell is programmed by applying a voltage potential between the column bitline and the row wordline to produce a programmed n+region in the substrate underlying the gate of the transistor.

Growing community of inventors

Cupertino, CA, United States of America

David Fong