Hewlett-packard Development Company, L.P.

David Fitzpatrick

Kevin Dooley

Lorraine Byrne

Liam Cheevers

Roger McQuaid

Richard Coull

Roger Mcquaid

A dielectric layer includes a reflow via. The reflow via is formed by reflow of the dielectric layer away from a raised feature. An interconnect is in contact with the raised feature through the reflow via.

Interconnects through dielectric vias

Devices with nanosized particles deposited on shaped surface geometries include a substrate with an active material of nanosized particles deposited on a surface of the substrate. The active material has an edge formed at a position determined with a shaped geometry of the surface.

Nanosized particles deposited on shaped surface geometries

A dielectric layer includes a reflow via. The reflow via is formed by reflow of the dielectric layer. An interconnect is in contact through the reflow via.

Interconnects through dielecric vias

A method of making templated circuitry employs a template system that includes a template of an insulator material on a carrier having a conductive surface. The template includes multiple levels and multiple regions, wherein a first level exposes the conductive surface of the carrier. A first metal is electrochemically deposited on the conductive surface in first regions of the first level. A circuit material is deposited to cover the first metal. The template is etched until a second level of the template exposes the conductive surface in second regions on opposite sides of the first regions. A second metal is electrochemically deposited on the conductive surface in the second regions. The template of deposited materials is transferred from the carrier to a substrate.

Templated circuitry fabrication

A method for fabrication of passive electronic components includes disposing a sacrificial layer on a carrier and forming a curable resin layer on top of the sacrificial layer and patterning the curable resin to form a cured resin template having multiple pattern levels. A metal material is deposited into the first pattern level to form a first structure. A dielectric material is then formed on exposed portions of the first structure. A nonselective subtractive process is used to expose the sacrificial layer in a bottom of the second pattern level and metal material is deposited into the second pattern level and built up to include a portion which crosses over the dielectric material.

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Rathfeigh, Ireland

David Fitzpatrick