Axcelis Technologies, Inc.

Lam Research Corporation

David Ferris

Alan Frederick Becknell

Michael G Ury

Carlo Waldfried

Ivan Berry

Aseem Kumar Srivastava

Alan C Janos

David William Kinnard

Richard E Pingree, Jr

Thomas James Buckley

Palanikumaran Sakthivel

Philip Hammar

Aseem Srivastava

Richard Pingree

Maw Tun

A plasma apparatus, various components of the plasma apparatus, and an oxygen free and nitrogen free processes for effectively removing photoresist material and post etch residues from a substrate with a carbon and/or hydrogen containing low k dielectric layer(s).

Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith

A plasma ashing process for removing photoresist material and post etch residues from a substrate comprising carbon, hydrogen, or a combination of carbon and hydrogen, wherein the substrate comprises a low k dielectric layer, the process comprising forming a plasma from an essentially oxygen free and nitrogen free gas mixture; introducing the plasma into a process chamber, wherein the process chamber comprises a baffle plate assembly in fluid communication with the plasma; flowing the plasma through the baffle plate assembly and removing photoresist material, post etch residues, and volatile byproducts from the substrate; periodically cleaning the process chamber by introducing an oxygen plasma into the process chamber; and cooling the baffle plate assembly by flowing a cooling gas over the baffle plate assembly. A process chamber adapted for receiving downstream plasma, the process chamber comprising an upper baffle plate comprising at least one thermally conductive standoff in thermal communication with a wall of the process chamber; and a lower baffle plate spaced apart from the upper baffle plate.

Apparatus and plasma ashing process for increasing photoresist removal rate

A reactor assembly and processing method for treating a substrate generally includes a base unit, a chuck assembly, a process chamber, an inlet manifold assembly and an exit manifold assembly. The inlet manifold assembly is in fluid communication with a first opening of the process chamber, wherein the inlet manifold assembly comprises a flow-shaping portion adapted to laterally elongate a gas and/or a reactant flow into the process chamber. The exhaust manifold assembly in fluid communication with a second opening of the process chamber and is diametrically opposed to the inlet manifold assembly. The process includes flowing a gas and/or reactive species into the process chamber of the reactor assembly in a direction that is about planar with the substrate surface providing improved uniformity and increased reactivity.

Reactor assembly and processing method

An apparatus and process for enhancing the ignition of a gas to form a plasma in a plasma tool. The apparatus and process includes the use of a plasma tube to locally enhance the applied electric field so that plasma can be initiated at higher pressures, at lower electric fields, and/or in otherwise difficult gases to ignite. The plasma tube includes at least one conductive fiber secured to the tube. A process for enhancing the local electric field includes coupling the plasma tube to an energy source such as microwave energy, radiofrequency energy, or a combination comprising at least one of the foregoing energy sources.

Plasma process and apparatus

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Rockville, MD, United States of America

David Ferris