Yeda Research and Develpment & Co. Ltd

University of California

The United States of America As Represented by the United States

Bar-ilan University

David Ferdinand Cahen

Joost Manassen

Gary Hodes

Konstantin Gartsman

Ron Naaman

Igor Lubomirsky

Abram Jakubowicz

Igor Lyubomirsky

Oscar Magnus Stafsudd

Abraham Shanzer

Arie Zaban

Yih W Chen

Yitzhak Avigal

Alexander Kadyshevitch

Gerard Bults

Benjamin Horwitz

Shmuel Malkin

Geula Dagan

Reit Artzi

Leonid Chernyak

Yitzchak Avigal

A solar energy conversion system is presented. The system comprises at least one waveguide arrangement having at least one light input respectively. The waveguide arrangement comprises a core unit for passing input solar radiation therethrough and a cladding material arrangement interfacing with the core therealong. The cladding material arrangement is configured as an array of spaced-apart solar cells arranged along the core unit and having different optical absorption ranges, such that an interface between the waveguide core and the cladding arrangement spectrally splits the photons of the input solar radiation by causing the photons of different wavelengths, while passing through the core unit, to be successively absorbed and thereby converted into electricity by the successive solar cells of said array.

Solar cells arrangement

A semiconductor sensing device for sensing presence, absence or level of species-of-interest in the environment is disclosed. The semiconductor sensing device comprises at least one layer of molecules deposited thereon. The molecules are electrically-responsive to the species-of-interest in a manner such that when the molecules interact with the species-of-interest, a reverse breakdown voltage characterizing the semiconductor sensing device is modified.

Molecular controlled semiconductor device

A semiconductor device for the detection of a target DNA or RNA is provided, composed of: at least one insulating or semi-insulating layer; one conducting semiconductor layer; two conducting pads on the upper layer making electrical contact with the conducting semiconductor layer, such that electrical current can flow between them at a finite distance from the surface of the device; and a layer of at least one single-stranded DNA probe directly adsorbed on the surface of the upper layer which is either a conducting semiconductor layer or an insulating or semi-insulating layer. The DNA probe may have a sequence complementary to a sequence of the target DNA or RNA, e.g., a sequence of a gene responsible for a genetic disease or disorder, and the detection of the target DNA is carried out by hybridization with the probe and monitoring either the current change resulting from the hybridization process when a constant electric potential is applied between the two conducting pads or measuring the change in the electric potential required to keep a constant current.

DNA detector based on molecular controlled semiconductor resistor

A hybrid organic-inorganic semiconductor device is provided as a sensor for chemicals and light, said device being composed of: (i) at least one layer of a conducting semiconductor such as doped n-GaAs or n-(Al,Ga)As; (ii) at least one insulating layer such as of an undoped semiconductor; e.g. GaAs or (Al,Ga)As; (iii) a thin layer of multifunctional organic sensing molecules directly chemisorbed on one of its surfaces, said multifunctional organic sensing molecules having at least one functional group that binds to said surface and at least one another functional group that serves as a sensor; and (iv) two conducting pads on the top layer making electrical contact with the electrically conducting layer, so that the electrical current can flow between them at a finite distance from the surface of the device. The surface-binding functional group of the multifunctional organic sensing molecule may be one or more aliphatic or aromatic carboxyl, thiol, sulfide, hydroxamic acid or trichlorosilane groups. The functional group that serves as a sensor may be a group suitable for binding and detection of metal ions such as Cu , Fe and Ru such as radicals derived from hydroxamic acids, bipyridyl, imidazol and hydroxyquinoline, or a group that is an efficient light absorber at a given wavelength and is suitable for detection of light such as radicals derived from aliphatic or aromatic hydroxamates, substituted aromatic groups such as cyanobenzoyl and methoxybenzoyl, bipyridyl, hydroxyquinoline, or imidazolyl groups to which a metal porphyrin or a metal phtalocyanin residue is attached.

Hybrid organic-inorganic semiconductor structures and sensors based thereon

Self stabilizing concentration profiles are achieved in solids. More particularly, semiconductor devices are made from n- or p-type mercury cadmium telluride (MCT) of the general formula Hg.sub.x Cd.sub.1-x Te where x=0.2 to 0.5 and n- or p-type zinc mercury telluride (ZMT) of the general formula Zn.sub.x Hg.sub.1-x Te where x=0.4 to 0.6. Silver, incorporated as a doping impurity or applied as an evaporated spot electromigrated within the MCT or ZMT to create one or more p-n junctions, usually under the influence of a pulsed positive bias. The resulting concentration profiles of silver and opposing internal electric fields of the p-n junctions achieve a balancing equilibrium that preserves and maintains the stability of the concentration profiles. For a specific telluride composition, Hg.sub.0.3 Cd.sub.0.7 Te, indium is the n-type dopant of choice.

Semiconductor device with stabilized junction

The invention related to a process for the production of a monolithic electronic and/or optoelectronic single-element or multi-element structure from a semionic material selected from the group of semionic materials comprising doped elemental semiconductors and doped binary, ternary or multinary chalcogenide or pnictide semiconductors, said process comprising: (a) establishing a location in a semionic body; (b) applying an electric field to said location in said semionic body; (c) maintaining said semionic body including said location at a temperature sufficiently low to preclude melting or decomposition of the semionic body while said electric field is being applied; and (d) controlling the electric field as to magnitude and time so that no decomposition and macroscopic melting of the material occurs while creating doping profiles sufficiently sharp to define at least one homojunction and thus create an electronic or optoelectronic device element in the semionic material in said location thereof. The invention further relates to the monolithic electronic and/or optoelectric structures produced by said process.

Monolithic optoelectronic and electronic structures

The invention relates to a monolithic two- or three-dimensional multi-element electronic structure made of a ternary or multinary chalogenide and pnictide semiconductor. The invention further relates to a method for the production of monolithic electronic single- or multi-element structures from semionic materials, which comprises applying at about ambient temperatures or below, a predetermined electric field, localized to specific locations of said structure, if desired with an additional excitation field thus creating the desired electronic device elements throughout the semionic material at predetermined locations thereof.

Monolithic electronic structures

Self stabilizing concentration profiles are achieved in solids. More particularly, semiconductor devices are made from n- or p-type mercury cadmium telluride (MCT) of the general formula Hg.sub.x Cd.sub.1-x Te and especially using Hg.sub.0.3 Cd.sub.0.7 Te. Silver, incorporated as a doping impurity or applied as an evaporated spot electromigrates within the MCT to create one or more p-n junctions, usually under the influence of a pulsed positive bias. The resulting concentration profiles of silver and opposing internal electric fields of the p-n junctions achieve a balancing equilibrium that preserves and maintains the stability of the concentration profiles. For the specific telluride composition, indium is the n-type dopant of choice.

Semiconductor device with p-n junction based on dopant profile in

In a photoelectrochemical solar cell, stable output and solar efficiency in excess of 10% are achieved with a photoanode of n-CuInSe.sub.2 electrode material and an iodine/iodide redox couple used in a liquid electrolyte. The photoanode is prepared by treating the electrode material by chemical etching, for example in Br.sub.2 /MeOH; heating the etched electrode material in air or oxygen; depositing a surface film coating of indium on the electrode material after the initial heating; and thereafter again heating the electrode material in air or oxygen to oxidize the indium. The electrolyte is treated by the addition of Cu.sup.+ or Cu.sup.2+ salts and In.sup.3+ salts.

Stable N-CuInSe.sub.2 /iodide-iodine photoelectrochemical cell

A portable device for photoacoustic spectroscopy of plants and other photosynthetic tissues, cells and organelles is provided. There is further provided a method of measuring photosynthesis of such tissues, cells and organelles.

Device and method and measurement of photosynthetic activity by

A system for storing electrical energy having a storage compartment containing a storage electrode made of tin, and further containing an alkaline sulfide solution containing tin in a soluble form. A battery made of a plurality of cells. Each of the cells is positioned within a container and separated by separating members adapted to slide within the container and includes a storage and a second compartment separated by a membrane. The membrane is adapted to compensate for volumetric variations within each of the compartments. A system comprising a plurality of electrolyte containing cells separated by separating members having orifices therein which permit fluid communication between the electrolyte of each of the cells. A battery made of a plurality of individual cells. Each of the cells comprises means for venting hydrogen generated in each of the cells. A method of assembling a battery made of a plurality of cells.

Storage of electrical energy with tin electrode system, storage

A process for preparing the surface of a metal chalcogenide. The metal chalcogenide is immersed in a suitable electrolyte. The electrolyte is selected such that the metal chalcogenide is relatively stable therein in the dark, but unstable as a photoelectrode under illumination. The metal chalcogenide is connected to another electrode; and the electrode is immersed in the electrolyte. The metal chalcogenide is illuminated to photoetch the chalcogenide thereby improving the surface electronic properties of the semiconductor. A process for the surface treatment of metal chalcogenides including immersing the metal chalcogenide in an aqueous solution containing Zn and/or Cr ions.

Surface treatment of semiconductor materials

Process for forming a semiconductor finding use in solid state and PEC cells as a photoelectrode, comprising preparing a slurry of at least one semiconductor starting material used to form the semiconductor, a flux and a liquid vehicle; applying a layer of the slurry to an electrically conductive substrate; and annealing the layer. The semiconductor produced by the process and a photoelectrochemical cell including the semiconductor.

Process for preparation of semiconductor and semiconductor photoelectrode

An assembly comprising at least two semiconductor electrodes, each of the semiconductor electrodes having a positive and negative surface, and an electrolyte for electrically connecting the surfaces of opposite polarity of said semiconductor electrodes, the electrolyte comprising at least one redox couple capable of a reversible redox reaction with one of said surfaces of opposite polarity of said semiconductor electrodes whereby the composition of said electrolyte remains substantially unchanged as charge is passed between said electrodes. An electrolysis assembly for electrolyzing a liquid comprising an electrolysis compartment connected with the above assembly.

Photoelectrochemical cell assembly having electrolyte contacts between

A photovoltaic system comprising a Cd(Se,Te) alloy junction forming material. A process of preparing a thin layer of the alloy by electrodeposition and by application of a slurry of the alloy to a substrate which is then annealed at an elevated temperature. The junction forming material finds particular application in photoelectrochemical cell systems; particularly those containing S/S.sup.= electrolytes. Electrodes formed of the inventive materials exhibit increased efficiency and improved stability.

Growing community of inventors

Rehovot, Israel

David Ferdinand Cahen