Carnegie Mellon University

Other

David Eugene Laughlin

David N Lambeth

Li-Lien Lee

Jian-Gang Zhu

Byung-ki Cheong

Ganping Ju

Timothy John Klemmer

Edward V Conley

Michael McHenry

Vladimir Keylin

Joseph Huth

Jian-Gang (Jimmy) Zhu

Jianguo Long

Heng Gong

Wei Yang

Jie Ziou

En Yang

René Johannes Marinus Van De Veerdonk

Todd Dennis Leonhardt

Yu-Nu Hsu

Jie Zou

A method of writing binary data comprising (i) heating a magnetic microstructure from an initial temperature to an above-ambient temperature that is not less than a transition temperature for the magnetic microstructure, which causes a phase transition interlayer of the magnetic microstructure to transition from an antiferromagnetic phase to a ferromagnetic phase; and (ii) reversing an orientation of magnetization of a magnetic storage layer of the magnetic microstructure with a magnetic field while the phase transition interlayer is in the ferromagnetic phase.

Method of writing data with binary anisotropy media

The invention discloses a soft magnetic amorphous alloy and a soft magnetic nanocomposite alloy formed from the amorphous alloy. Both alloys comprise a composition expressed by the following formula:(FeCoM)TBN

Soft magnetic alloy and uses thereof

A process of fabricating a perpendicular magnetic recording medium. In one embodiment, the process may comprise forming a metallic buffer layer with a (002) texture on an underlayer using a deposition process performed at a temperature below 30&#xb0; C. The underlayer may have a crystalline (001) texture. The process may further comprise forming a perpendicular magnetic recording layer on top of the metallic buffer layer using a deposition process performed at a temperature above 350&#xb0; C. The magnetic recording layer may comprise a magnetic material with a L1crystalline structure and with a c-axis perpendicular to a plane of the perpendicular magnetic recording layer. The process may further comprise removing metal of the metallic buffer layer from a top surface of the perpendicular magnetic recording layer that moved to the top surface of the perpendicular magnetic recording layer during the forming of the perpendicular magnetic recording layer.

Buffer layers for L10 thin film perpendicular media

A magnetic microstructure comprising (i) a magnetic storage layer having a magnetic easy axis perpendicular to a film plane of the storage magnetic layer; (ii) a magnetic assist layer having a magnetic easy axis in the film plane; and (iii) a phase transition interlayer between the magnetic storage layer and the magnetic assist layer. The phase transition layer comprises a material, such as FeRh, that switches from antiferromagnetic at ambient to ferromagnetic at a transition temperature that is greater than ambient, but below the Curie temperature. When the phase transition interlayer is in antiferromagnetic phase, there exists little magnetic coupling between the storage and assist layers. When the interlayer changes to ferromagnetic phase, the interlayer couples the magnetic moments of the storage and assist layer ferromagnetically. If the anisotropy field-thickness product of the two layers is similar and the coupling is sufficiently strong, the effective magnetic anisotropy of the storage layer and the assist layer essentially vanishes. That way, the required write field at the recording temperature needs only to be a few percent of the ambient anisotropy field of the storage layer.

Binary anisotropy media

Magnetic films having magnetic regions and non-magnetic regions are disclosed. The film is subjected to ion irradiation in order to produce chemically disordered regions in the film. The irradiated disordered regions may correspond to the non-magnetic regions of the film. Alternatively, the irradiated disordered regions may correspond to the magnetic regions of the film. In one embodiment, portions of a magnetic CrPtfilm are converted to non-magnetic regions by irradiating the regions with boron ions which disorder the CrPtfilm in the treated regions. The film may be patterned into magnetic regions and non-magnetic regions for applications such as magnetic recording media in computer disc drive systems.

Magnetic films having magnetic and non-magnetic regions and method of producing such films by ion irradiation

The present invention provides a longitudinal magnetic recording media having a substrate, optionally, a sputter deposited MgO seed layer, a Co or Co alloy based magnetic layer and an underlayer disposed between the substrate and the magnetic layer comprised of a material having a body centered cubic derivative ordered crystalline structure, preferably a B2, DO or L2 structure. The material may be for example, NiAl, FeAl or Mn Si. A thin Cr or Cr alloy intermediate layer of about 1.0 nm to 5.0 nm thick may be positioned between the underlayer and the magnetic layer.

Structure for and method of making magnetic recording media

The present invention provides a longitudinal magnetic recording media having a substrate, a Co or Co alloy based magnetic layer arid an underlayer disposed between the substrate and the magnetic layer. The underlayer is made of a material having a Ga Pt crystalline structure, most preferably Ni Al . Several intermediate layers, disposed between the underlayer and the magnetic layer may also be included.

Magnetic recording medium with a Ga3Pt5 structured underlayer and a cobalt-based magnetic layer

The present invention provides a magnetic recording media incorporating Zn containing layers in close proximity to a magnetic layer to provide media having increased coercivity and lower noise. The Zn containing layer can be incorporated in a rotating, translating or stationary recording media to operate in conjunction with magnetic transducing heads for recording and reading of magnetic data, as well as other applications. The magnetic recording medium of the invention preferably includes a Co or Co alloy film magnetic layer, underlayer structures to promote epitaxial crystalline structure in the magnetic layer, and a Zn containing layer to promote isolation between the magnetic grains. The medium can further include seed layers, underlayers, intermediate layers, and overlayers. The process of manufacture includes promoting diffusion of Zn to the magnetic layer grain boundaries.

Zinc enhanced hard disk media

The present invention provides for magnetic and magneto-optic recording media, transducers and data storage devices constructed therefrom that have highly oriented films having long range order in the crystal structure of the film. The recording medium includes a magnetic recording layer comprised of Co-based material, such as Co or one or more Co alloys having a (10{overscore (1)}0) crystal texture, a substrate, a first underlayer having a fcc structure and a (110) crystal texture disposed between the substrate and the magnetic recording layer. A second underlayer having a bcc structure and a (112) crystal texture is also disposed between the magnetic recording layer and the first underlayer. In particular, if a (110) Si single crystal substrate is non-oxidized certain metals having fcc structures, such as Ag, Cu, Al, and Au and fcc derivative structures, such L1,and L1,structures, can be epitaxially grown on the Si surface. While the one unit cell to one unit cell lattice match between fcc Ag and A4 (diamond) Si is quite poor, multiples of the Ag unit cell distance fit very well on the Si surface. The long range order of the Si surface induces the epitaxial growth of the Ag fcc structure. Upon this fcc structure, a bcc structure, such as Cr, or a bcc derivative, such as B2, DO3 and/or L2,can be epitaxially grown.

Highly oriented magnetic thin films, recording media, transducers, devices made therefrom and methods of making

The present invention provides for a magnetic recording media incorporating Mn-containing layers between a substrate and a magnetic layer to provide media having increased coercivity and lower noise. The Mn-containing layer can be incorporated in a rotating, translating or stationary recording media to operate in conjunction with magnetic transducing heads for recording and reading of magnetic data, as well as other applications. The magnetic recording medium of the invention preferably includes a Co or Co alloy film magnetic layer, and Mn-containing layer, preferably comprised of VMn, TiMn, MnZn, CrMnMo, CrMnW, CrMnV, and CrMnTi, and most preferably a CrMn alloy, disposed between the substrate and the magnetic layer to promote an epitaxial crystalline structure in the magnetic layer. The medium can further include seed layers, preferably polycrystalline MgO for longitudinal media, underlayers, and intermediate layers. Underlayers and intermediate layers are comprised of materials having either an A2 structure or a B2-ordered crystalline structure disposed between the seed layer and the magnetic layer. Materials having an A2 structure are preferably Cr or Cr alloys, such as CrV, CrMo, CrW and CrTi. Materials having a B2-ordered structure having a lattice constant that is substantially comparable to that of Cr, such as those preferably selected from the group consisting of NiAl, AILCo, FeAl, FeTi, CoFe, CoTi, CoHf, CoZr, NiTi, CuBe, CuZn, A-LMn, AlRe, AgMg, and Al.sub.2 FeMn.sub.2, and is most preferably FeAl or NiAl.

Manganese containing layer for magnetic recording media

The present invention provides a longitudinal magnetic recording media having a substrate, a sputter deposited MgO seed layer, a Co or Co alloy based magnetic layer and an underlayer disposed between the seed layer and the magnetic layer comprised of Cr, a Cr alloy or a material having a B2 ordered crystalline structure, preferably NiAl or FeAl. A thin Cr or Cr alloy intermediate layer of about 1.0 nm to 5.0 nm thick may be positioned between the underlayer and the magnetic layer.

Magnetic recording medium with a MgO sputter deposited seed layer

The present invention provides a longitudinal magnetic recording media having a substrate, a Co or Co alloy based layer and an underlayer disposed between the substrate and the magnetic layer comprised of a material having a B2 ordered crystalline structure, preferably NiAl or FeAl. A thin Cr intermediate layer of about 1.0 nm to 5.0 nm thick may be positioned between the underlayer and the magnetic layer.

Growing community of inventors

Pittsburgh, PA, United States of America

David Eugene Laughlin