Imec

Hanwa Electronics Ind. Co. Ltd.

David Eric Trémouilles

Dimitri Linten

Steven Thijs

Mirko Scholz

A method for manufacturing a MuGFET ESD protection device having a given layout by means of a given manufacturing process, the method comprising selecting multiple interdependent layout and process parameters of which a first set are fixed by said manufacturing process and a second set are variable, selecting multiple combinations of possible layout and process parameter values which meet predetermined ESD constraints; determining an optimum value for at least one other parameter in view of a predetermined design target apart from the predetermined ESD constraints; determining values for fin width (W), gate length (L) and number of fins (N) on the basis of the optimum value; and manufacturing said MuGFET ESD protection device using the given manufacturing and process values.

Design methodology for MuGFET ESD protection devices

The present disclosure relates to a method for calibrating transient behaviour of an electrostatic discharge (ESD) test system. The system includes an ESD pulse generator and probe needles for applying a predetermined pulse on a device under test. The probe needles are connected to the ESD pulse generator via conductors. The test system includes measurement equipment for detecting transient behaviour of the device under test by simultaneously capturing voltage and current waveforms the device as a result of the pulse. The method includes the steps of: (a) applying the ESD test system on a first known system with a first known impedance, (b) applying the ESD test system on a second known system with a known second impedance, and (c) determining calibration data for the transient behaviour the ESD test system on the basis of captured voltage and current waveforms, taking into account said known first and second impedances. In preferred embodiments the waveforms are transferred to the frequency domain for correlation.

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Villeneuve, France

David Eric Trémouilles