United States of America as Represented by the Secretary of the Air Force

David E Zelmon

Jonathan T Goldstein

Melvin C Ohmer

John G Jones

Frank K Hopkins

Shamus P NcNamara

Michael D Martin

Arianna M McNamara

A scattered light detector comprises a first photodiode array comprising one or more photodiodes arranged in a planar, semicircular pattern on a substrate, each of the one or more photodiodes having an outer edge and an inner edge; and a notch perpendicular to the substrate and located adjacent the inner edge of each of the one or more diodes, and equidistant from the outer edges of each of the one or more photodiodes, the notch configured to accept an optical fiber oriented perpendicular to the plane of the one or more photodiodes. When there are two or more photodiodes, the photodiodes may be divided into two or more segments extending outwardly from the notch. Each of the photodiodes shares a common electrical ground. The planes of the one or more photodiodes of the first and second photodiode arrays are oriented parallel to each other and spaced a predetermined distance apart.

Passive characterization of high power optical fiber average power and LP01 and LP11 modes by detecting MIE scattered light

A solid state laser device made from a nonlinear optic quaternary alloy of Silver, Gallium, Selenium and Tellurium semiconductor material or Silver, Gallium, Sulfur and Tellurium semiconductor material. The Tellurium component in each alloy provides quaternary alloying anion modification of an underlying ternary semiconductor crystal and achieves tuning of the birefringence and tuning of the wavelength passband of the semiconductor material. The tuned quaternary alloy enables beam walkoff-free noncritical phase match operation of the laser device including use of a phase match angle supporting optimum use of the material's nonlinear properties, maximized useful length of the material crystal, room temperature wavelength changing operation, significantly increased second order nonlinear susceptibility, a factor of ten reduction in the walk-off angle and photon energy conversion efficiencies several times those usually achieved. The Tellurium alloy component also accomplishes shifting of the semiconductor material energy absorption characteristic to avoid a preferred laser pump wavelength energy absorption peak and assists in circumvention of the thermal lensing phenomenon in the crystal. The accomplished laser device provides infrared energy output while operating in for example either the second harmonic generation or the optical parametric oscillation configurations. Examples involving both related materials and the ultimate quaternary materials are included.

Telluride quaternary nonlinear optic materials

A solid state laser device made from a nonlinear optic quaternary alloy of Silver, Gallium, Selenium and Tellurium semiconductor material or Silver, Gallium, Sulfur and Tellurium semiconductor material. The Tellurium component in each alloy provides quaternary alloying anion modification of an underlying ternary semiconductor crystal and achieves tuning of the birefringence and tuning of the wavelength passband of the semiconductor material. The tuned quaternary alloy enables beam walkoff-free noncritical phase match operation of the laser device including use of a phase match angle supporting optimum use of the material's nonlinear properties, maximized useful length of the material crystal, room temperature wavelength changing operation, significantly increased second order nonlinear susceptibility, a factor of ten reduction in the walk-off angle and photon energy conversion efficiencies several times those usually achieved. The Tellurium alloy component also accomplishes shifting of the semiconductor material energy absorption characteristic to avoid a preferred laser pump wavelength energy absorption peak and assists in circumvention of the thermal lensing phenomenon in the crystal. The accomplished laser device provides infrared energy output while operating in for example either the second harmonic generation or the optical parametric oscillation configurations. Examples involving both related materials and the sought after quaternary materials are included.

Utilization of telluride quaternary nonlinear optic materials

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New Carlisle, OH, United States of America

David E Zelmon