Micron Technology Incorporated

Agr Subsea, Inc.

David E Smith

Kevin J Torek

Paul A Morgan

Roger Sverre Stave

Nils Lennart Rolland

Harald Hufthammer

Systems and methods for drilling a well bore in a subsea formation from an offshore structure positioned on a water surface with a drill string that is suspended from the structure and includes a bottom hole assembly adapted to form a top hole portion of the well bore. A drilling fluid source on the offshore structure supplies drilling fluid through the drill string to the bottom hole assembly where the drilling fluid exits from the bottom hole assembly during drilling and returns up the well bore. A suction module is disposed at the sea floor and collects the drilling fluid emerging from the well bore. A pump module is disposed on a return line, which is in fluid communication with the suction module, at a position below the water surface and above the sea floor. The pump module is operable to receive drilling fluid from the suction module and pump the drilling fluid through the return pipe to the same offshore structure or a different offshore structure.

Return line mounted pump for riserless mud return system

The invention includes a semiconductor processing method of cleaning a surface of a copper-containing material by exposing the surface to a mixture having a basic pH and comprising Cl , NO and F . The invention also includes a semiconductor processing method of forming an opening to a copper-containing substrate. Initially, a mass is formed over the copper-containing substrate. The mass comprises at least one of a silicon nitride and a silicon oxide. An opening is etched through the mass and to the copper-containing substrate. A surface of the copper-containing substrate defines a base of the opening, and is referred to as a base surface. The base surface of the copper-containing substrate is at least partially covered by at least one of a copper oxide, a silicon oxide or a copper fluoride. The base surface is cleaned with a cleaning solution comprising hydrochloric acid, nitric acid and hydrofluoric acid to remove at least some of the at least one of a copper oxide, a silicon oxide or a copper fluoride from over the base surface. The cleaning solution comprises a pH of at least 7.

Methods of cleaning surfaces of copper-containing materials, and methods of forming openings to copper-containing substrates

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Houston, TX, United States of America

David E Smith