Intermolecular, Inc.

Celestial Ai Inc.

Kabushiki Kaisha Toshiba

Sandisk 3d LLC

Other

David E Lazovsky

Tony P Chiang

Thomas R Boussie

Philip Winterbottom

Martinus Bos

Subal Sahni

Alexander A Gorer

Ankur Aggarwal

Sandra Guy Malhotra

Majid Keshavarz

Dipankar Pramanik

Takeshi Yamaguchi

Tim Minvielle

Nikolaos Pleros

Apostolos Tsakyridis

Angelina Totovic

George Giamougiannis

Yangjin Ma

Thomas H McWaid

A package comprises a photonic integrated circuit (PIC) with a modulator having a first modulator input, and a PIC interconnect region within two millimeters or fifty microns from the modulator. Additionally, an electric integrated circuit (EIC) is included with a driver circuit and an EIC interconnect region within two millimeters or fifty microns from the driver circuit. The driver circuit is electrically connected to the first modulator input via the EIC interconnect region, a first metal interconnect, and the PIC interconnect region. The modulator receives a temperature-dependent bias voltage, where the temperature dependence of the bias voltage inversely matches the temperature dependence of the modulator across an extended temperature range.

Optically bridged multicomponent package with extended temperature range

A package includes a bridging element (an OMIB), and first and second photonic paths, forming a bidirectional photonic path. The OMIB has first and second interconnect regions to connect with one or more dies. Third and fourth unidirectional photonic paths may couple between the first interconnect region and an optical interface (OI). A photonic transceiver has a first portion in the OMIB and a second portion in one of the dies. The first and the second portions may be coupled via an electrical interconnect less than 2 mm in length. The die includes compute elements around a central region, proximate to the second portion. The OMIB may include an electro-absorption modulator fabricated with germanium, silicon, an alloy of germanium, an alloy of silicon, a III-V material based on indium phosphide (InP), or a III-V material based on gallium arsenide (GaAs). The OMIB may include a temperature compensation for the modulator.

Optical multi-die interconnect bridge with electrical and optical interfaces

One embodiment is a method that includes generating a request for a data item in a memory, obtaining the data item from the memory with a photonic interface, sending the data item to a fabric using a transmit unit of the photonic interface, and routing the data item through a portion of the fabric coupled to the memory, the portion of the fabric including one or more additional transmit and receive units between the photonic interface and a destination receive unit.

Photonic memory fabric for system memory interconnection

A package includes a first die with a compute element and first region, a second die with a compute element and second region, and a bridging element connecting the first and second dies. The bridging element includes interconnect regions for electrical coupling, a first photonic path from the first interconnect region to the second, and a second photonic path in the reverse direction. A photonic transceiver is integrated into the bridging element, with one portion sending and receiving optical signals via the photonic paths, and the other portion located in an AMS block in the first die or second die near the memory and compute elements. The transceiver portions are connected by a short electrical interconnect (less than 2 mm).

Multicomponent photonically intra-die bridged assembly

A package includes a first die with a bridging element with a first interconnect region, a first photonic transceiver portion, a second interconnect region, a first photonic path to an optical interface (OI), and a second photonic path from the OI to the first photonic transceiver portion. The first interconnect region electrically couples the first photonic transceiver portion to a second photonic transceiver portion in an analog/mixed-signal die (AMS die), while the second interconnect region connects a third photonic transceiver portion in a general die to the second photonic transceiver portion using an electrical coupling embedded in the first die. The electrical interconnects in the first interconnect region are less than two millimeters in length.

Optical bridging element for separately stacked electrical ICs

A package comprises a first die and a bridging element. The first die includes a compute element and/or memory element, a first region, a first portion of a photonic transceiver, and a first die interconnect region. The first region intersects a center of the first die. The first portion of a photonic transceiver includes and AMS block with a driver and transimpedance amplifier, coupled with the first die interconnect region. The bridging element includes a modulator and photodetector, connected with a bridging interconnect region. An optical interface, photonically linked with the first photonic transceiver, routes packets from an external device optical interface to the compute and/or memory element.

Multicomponent photonically bridged assembly

An implementation provides a package that includes a first die including a bridging element, an analog/mixed-signal (AMS) die, and a general die. The first die includes: a first photonic transceiver portion, a first die first interconnect region, and an optical interface (OI). The AMS die includes a second photonic transceiver portion, an AMS die first interconnect region on a first surface of the AMS die electrically and physically coupled with the first die first interconnect region; and an AMS die second interconnect region on a second surface of the AMS die. The general die includes a third photonic transceiver portion, and a general die first interconnect region electrically and physically coupled with the second photonic transceiver portion.

Stacked-dies optically bridged multicomponent package

Optical multi-die interconnect bridge with optical interface

Optical multi-die interconnect bridge (OMIB)

Growing community of inventors

Los Gatos, CA, United States of America

David E Lazovsky