Motorola Corporation

Avago Technologies General IP (singapore) Pte. Ltd.

Javelin Semiconductor, Inc.

Black Sand Technologies, Inc.

David E Bockelman

Robert E Stengel

Vishnu Shankar Srinivasan

Timothy Joseph Dupuis

Anil Samavedam

Eric Kimball

William Richard Eisenstadt

Douglas H Weisman

Susanne A Paul

Ryan Matthew Bocock

Young Kwon

Marshall Maple

Joo Min Jung

Joseph P Heck

Lei Zhao

Kenneth David Cornett

Daniel E Brueske

Justin Dougherty

Jui-Kuo Juan

Frederick J Martin

Patrick N Morgan

Matthew D Rowley

A heterojunction bipolar transistor (HBT) hybrid type RF (radio frequency) power amplifier includes a first device including an input terminal for receiving an RF signal, a pre-driver stage for amplifying the received RF signal, and an output terminal, the input terminal, the pre-driver stage and the output terminal being disposed in or over a first substrate; and a second device having a main stage having an HBT amplifier circuit disposed in or over a second substrate to further amplify the RF signal amplified by the pre-driver stage. The RF signal further amplified by the main stage is output through the output terminal of the first device.

Hybrid power amplifier having electrical and thermal conduction path

An apparatus comprises an amplifier comprising at least one metal oxide semiconductor (MOS) transistor having a parasitic gate-to-drain capacitance, and at least one MOS neutralization device having a neutralization capacitance configured to compensate for the parasitic gate-to-drain capacitance of the at least one MOS transistor.

Neutralization of parasitic capacitance using MOS device

In an embodiment, a power amplifier (PA) includes a signal processing path including gain stages to receive a radio frequency (RF) signal and to output an amplified RF signal, sensors coupled to the signal processing path each to sense a characteristic of operation of the PA, and a microcontroller configured to execute instructions and to receive the operation characteristic(s) and to control one or more parameters of the signal processing path responsive this operation characteristic.

Power amplifier having an integrated microcontroller

Hybrid power amplifier comprising heterojunction bipolar transistors (HBTs) and complementary metal oxide semiconductor (CMOS) devices

In one implementation, a power amplifier may include a gain device to receive an input signal and to output an amplified signal, and a compensation device coupled to the gain device to compensate for a change in a capacitance of the gain device occurring due to a change in the input signal. The power amplifier may be formed using a complementary metal oxide semiconductor (CMOS) process.

Compensating for non-linear capacitance effects in a power amplifier

Embodiments are directed to capacitance compensation via a compensation device coupled to a gain device to compensate for a capacitance change occurring due to an input signal change, along with a controller coupled to the compensation device to receive the input signal and to control an amount of compensation based on the input signal. In some embodiments, banks may be formed of multiple compensation devices, where each of the banks has a different size and is coupled to receive a different set of bias voltages.

Non-linear capacitance compensation

Narrow band tunable radio frequency (RF) power amplifiers (PAs) and related methods are disclosed that provide narrow band tunable gain responses, such as linear gain responses, that can be selected for different frequency bands. The narrow band tunable PAs thereby provide out-of-band rejection for different selectable frequency bands so that narrow band filters are not required in the transmit input path for communication devices. The pass band location and/or bandwidth for the narrow band gain response can be tuned using different techniques, as desired. The narrow band tunable PAs can also be fabricated using CMOS processing, if desired, so that a CMOS PA integrated circuit is provided.

Narrow-band tunable radio frequency (RF) power amplifiers and related methods

In one embodiment, a method includes generating a current that is proportional to a mobility and an oxide capacitance of a tracking device and independent of a threshold voltage variation of the tracking device, generating a voltage from the current, and providing the voltage as at least part of a bias voltage for another device. In one embodiment, this other device may be a compensation circuit coupled to a main device to compensate for capacitance non-linearity of the main device.

Generating a process and temperature tracking bias voltage

In one embodiment, the present invention includes an apparatus having at least two gain stages to receive incoming signals and to output amplified signals, along with multiple regulators. More specifically, a linear regulator can be coupled to the first gain stage to provide a first regulated voltage to the first gain stage, and a switching regulator coupled to the second gain stage to provide a second regulated voltage to the second gain stage.

Supply control for multiple power modes of a power amplifier

In one implementation, the present invention includes a diode device to receive an incoming radio frequency (RF) signal to be amplified in a gain device of an amplifier and to provide a pre-distorted signal. Based on this pre-distorted signal, the gain device can output an amplified RF signal having substantial linearity to the incoming RF signal.

Providing pre-distortion to an input signal

In one embodiment, the present invention includes multiple gain stages to receive and amplify a differential input signal at different common mode voltages. The stages each may include a pair of linear NMOS gain transistors coupled to a primary coil of a given output transformer. One of the stages may include commonly coupled terminals coupled to a center tap of the primary coil of an output transformer of another stage, and a supply current provided to one of the stages is re-used for the other stage(s).

Output gain stage for a power amplifier

A method and apparatus is provided for use in power amplifiers for reducing the peak voltage that transistors are subjected to. A power amplifier is provided with first and second switching devices and an inductor connected between the switching devices. The switching devices are driven such that the switching devices are turned on and off during the same time intervals. Differential RF power amplifiers are also provided with inductive networks coupled at various nodes of the power amplifiers. In some examples, techniques are used to stabilize differential power amplifiers by stabilizing common-mode feedback loops.

Method and apparatus for stabilizing RF power amplifiers

In one embodiment, the present invention includes multiple gain stages and an output network coupled to the gain stages. Each of the gain stages can be independently controlled to amplify a radio frequency (RF) signal to an output power level for transmission from a mobile wireless device. When controlled to be inactive, at least one of the gain stages can be placed into a low impedance state.

Growing community of inventors

Plantation, FL, United States of America

David E Bockelman