Nanonexus Corporation

Dpix, LLC

David Doan

Fu Chiung Chong

Sammy Mok

Frank Swiatowiec

Syamal Kumar Lahiri

Chang-Ming Lin

Erh-Kong Chieh

Roman Milter

Joseph Michael Haemer

Yi-Hsing Chen

Richard L Weisfield

Kungang Zhou

A method is provided for fabricating an image sensor array in a manner that reduces the potential for defects resulting from electrostatic discharge events during fabrication of the image sensor array. The method includes: forming at least one pixel over a substrate, the pixel including a switching transistor and a photo-sensitive cell; and forming a dielectric interlayer over the pixel. A key step in the method of the present invention is depositing a first conductive layer over the dielectric interlayer. After the first conductive layer is formed, the image sensor array is well protected from ESD events because the first conductive layer spreads out any charge induced by tribo-electric charging events that may occur during subsequent fabrication processing steps, thereby reducing the potential for localized damage to the switching transistors upon the occurrence of ESD events.

ESD induced artifact reduction design for a thin film transistor image sensor array

This invention provides a solution to increase the yield strength and fatigue strength of miniaturized springs, which can be fabricated in arrays with ultra-small pitches. It also discloses a solution to minimize adhesion of the contact pad materials to the spring tips upon repeated contacts without affecting the reliability of the miniaturized springs. In addition, the invention also presents a method to fabricate the springs that allow passage of relatively higher current without significantly degrading their lifetime.

Miniaturized contact spring

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San Jose, CA, United States of America

David Doan