Canon Anelva Corporation

Other

National Institute of Advanced Industrial Science and Technology

Anelva Corporation

Fuji Electric Co., Ltd.

Showa Denko K.k.

Canaon Anelva Corporation

David Djulianto Djayaprawira

Koji Tsunekawa

Hiroki Maehara

Motonobu Nagai

Migaku Takahashi

Naoki Watanabe

Shinji Yamagata

Shinji Yuasa

Einstein Noel Abarra

Masahiro Shibamoto

Yoshinori Nagamine

Ayumu Miyoshi

Kazuto Yamanaka

Yasumi Kurematsu

Satoshi Hitomi

Satoru Yoshimura

Hiroki Shoji

Yoshimitsu Kodaira

Kazuya Komiyama

Naokion Watanabe

A magnetoresistance device has an MgO (magnesium oxide) layer provided between a first ferromagnetic layer and a second ferromagnetic layer. The device is manufactured by forming a film of the MgO layer in a film forming chamber. A substance whose getter effect with respect to an oxidizing gas is large is adhered to surfaces of components provided in the chamber for forming the MgO layer. The substance having a large getter effect is a substance whose value of oxygen gas adsorption energy is 145 kcal/mol or higher. Ta (tantalum), in particular, is preferable as a substance which constitutes the magnetoresistance device.

Method of manufacturing magnetoresistive device

A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure.

Magnetoresistance effect device and method of production of the same

The present invention provides a substrate processing apparatus capable of suppressing mutual contamination and/or damage of the insides of ion beam generators arranged opposite each other via a substrate, and a magnetic recording medium manufacturing method. A substrate processing apparatus according to an embodiment of the present invention includes a first ion beam generator that applies an ion beam to one surface to be processed of a substrate, and a second ion beam generator that applies an ion beam to another surface to be processed, which are arranged opposite each other via the substrate, and a first grid in the first ion beam generator, and a second grid in the second ion beam generator are configured so as to be asymmetrical to each other.

Substrate processing apparatus, and magnetic recording medium manufacturing method

Disclosed are method and apparatus for manufacturing a magnetoresistive device which are suitable for manufacturing a high-quality magnetoresistive device by reducing damages caused during the processing of a multilayer magnetic film as a component of the magnetoresistive device, thereby preventing deterioration of magnetic characteristics due to such damages. Specifically disclosed is a method for manufacturing a magnetoresistive device, which includes processing a multilayer magnetic film by performing a reactive ion etching on a substrate which is provided with the multilayer magnetic film as a component of the magnetoresistive device. This method for manufacturing a magnetoresistive device includes irradiating the multilayer magnetic film with an ion beam after the reactive ion etching.

Method and apparatus for manufacturing magnetoresistive devices

Method of production of a magnetoresistance effect device

A magnetoresistive device has an MgO (magnesium oxide) layer provided between a first ferromagnetic layer and a second ferromagnetic layer. The device is manufactured by forming a film of the MgO layer in a film forming chamber. A substance whose getter effect with respect to an oxidizing gas is large is adhered to surfaces of components provided in the chamber for forming the MgO layer. The substance having a large getter effect is a substance whose value of oxygen gas adsorption energy is 145 kcal/mol or higher. Ta (tantalum), in particular, is preferable as a substance which constitutes the magnetoresistive device.

Method of manufacturing magnetoresistive device and apparatus for manufacturing the same

The present invention provides a substrate processing apparatus capable of suppressing mutual contamination and/or damage of the insides of ion beam generators arranged opposite each other via a substrate, and a magnetic recording medium manufacturing method. A substrate processing apparatus according to an embodiment of the present invention includes a first ion beam generator that applies an ion beam to one surface to be processed of a substrate W, and a second ion beam generator that applies an ion beam to another surface to be processed, which are arranged opposite each other via the substrate W, and an area of a first grid in the first ion beam generator, and an area of a second grid in the second ion beam generator, each area corresponding to an opening of the substrate W, are occluded.

A magnetoresistive element includes an antiferromagnetic layer formed from a layer containing manganese, a layered magnetization fixed layer which includes a first magnetization fixed layer located over a side of the antiferromagnetic layer and formed from a layer containing a ferromagnetic material and a platinum group metal, a second magnetization fixed layer formed from a layer containing a ferromagnetic material, and a first nonmagnetic intermediate layer located between the first magnetization fixed layer and the second magnetization fixed layer, a magnetic free layer formed from a layer containing a ferromagnetic material, and a second nonmagnetic intermediate layer located between the layered magnetization fixed layer and the magnetic free layer.

Magnetoresistive element, method of manufacturing the same, and magnetic multilayered film manufacturing apparatus

There are comprised a load chamber () for carrying in a wafer from outside, an unload chamber () for carrying out a wafer to outside, and a plurality of conveyance chambers () and a plurality of process modules () connected in series between the load chamber and the unload chamber. The conveyance chambers and the process modules are connected alternately and the plurality of conveyance chambers includes a first end conveyance chamber () connected to the load chamber, a second end conveyance chamber () connected to the unload chamber, and another one or a plurality of intermediate conveyance chambers ().

Inline-type wafer conveyance device

A structure is provided in which a load lock chamber () for carrying in an unprocessed wafer from outside and carrying out a processed wafer to outside, a first end conveyance chamber () to be connected to the load lock chamber, at least one intermediate conveyance chamber (), a plurality of sets of a pair of process modules () provided adjacent to each other and capable of independent processing, and a second end conveyance chamber () disposed at the end part on the opposite side of the load lock chamber are connected in series. Each set of process modules (and) is arranged one by one between the first end conveyance chamber and the intermediate conveyance chamber, between the intermediate conveyance chambers, and between the intermediate conveyance chamber and the second end conveyance chamber, respectively.

This application discloses a method and apparatus for manufacturing a magnetoresistive multilayer film having a structure where an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer are laminated on a substrate in this order. A film for the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. A film for an extra layer interposed between the substrate and the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. The film for the antiferromagnetic layer is deposited by sputtering as a gas mixture of argon and another gas of larger atomic number than argon is used.

Method and apparatus for depositing a magnetoresistive multilayer film

A magnetoresistance effect device has a fixed ferromagnetism layer, a free ferromagnetism layer, and a barrier layer sandwiched by these ferromagnetic layers. It is constituted so that CoFeB whose amount of addition of boron B (b: atomic %) is 21%&#x2266;b&#x2266;23% may be used for the free ferromagnetism layer. In the magnetic resistance effect element, a magnetostrictive constant does not change steeply near the magnetostrictive constant zero. A MR ratio is maintained to be high.

Magnetoresistance effect device

A method for manufacturing a magnetoresistive multilayer film. An antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer are laminated on a substrate in this order. A film for the antiferromagnetic layer is deposited by a sputtering process as oxygen gas is added to a gas for sputtering. A film for an extra layer interposed between the substrate and the antiferromagnetic layer is deposited by a sputtering process as oxygen gas is added to a gas for sputtering. A film for the antiferromagnetic layer is deposited by a sputtering process with a gas mixture of argon and another gas of larger atomic number than argon.

Method for manufacturing a magnetoresistive multilayer film

A magnetic recording medium was a high normalized coercive force and superior thermal stability. The magnetic recording medium comprises a non-magnetic base material, and a ferromagnetic metal layer of cobalt based alloy formed on top of this base material with a metal underlayer disposed therebetween, and displays a coercive force Hc of at least 2000 (Oe) and an anisotropic magnetic field Hkof at least 10,000 (Oe). Furthermore, magnetic recording media in which the aforementioned metal underlayer and/or the ferromagnetic metal layer are fabricated in a film fabrication chamber with an ultimate vacuum at the 10Torr level are preferred. A magnetic recording medium according to the present invention can be ideally applied to hard disks, floppy disks, and magnetic tapes and the like.

Growing community of inventors

Inagi, Japan

David Djulianto Djayaprawira