Nxp B.v.

David Desmortreux

Serge Bardy

Lucie A Rousseville

Philippe Le Duc

Semiconductor device with a patterned pad metal layer and a patterned under-bump metallization layer being mutually electrically connected in a common contact area. The semiconductor device includes a first test structurefor determining a contact resistance between the patterned metallization layer and the patterned pad metal layer in the common contact areas. The first test structure includes a pad metal layer portionand a metallization layer portionbeing in electrical communication with the pad metal layer portionthrough the common contact area. The first test structurefurther includes connection areasthat are electrically connected with each other substantially via the common contact area. Upon application of a current between the connection areasa voltage drop occurs that is representative for a voltage drop over the common contact area

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May sur Orne, France

David Desmortreux