Tel Fsi, Inc.

Fsi International, Inc.

David Dekraker

Richard E Williamson

Jeffery W Butterbaugh

Alan Dee Rose

Kevin L Siefering

Jimmy D Collins

Tracy A Gast

Mark A Stiyer

Kurt Karl Christenson

William P Inhofer

Rinsing methodologies and components to accomplish rinsing of tool surfaces in tools that are used to process one or more microelectronic workpieces. The invention can be used to rinse structures that overlie a workpiece being treated in such a manner to function in part as a lid over the process chamber while also defining a tapering flow channel over the workpiece. Rather than spray rinsing liquid onto the surface in a manner that generates undue splashing, droplet, or mist generation, a swirling flow of rinse liquid is generated on a surface of at least one fluid passage upstream from the surface to be rinsed. The swirling flow then provides smooth, uniform wetting and sheeting action to accomplish rinsing with a significantly reduced risk of generating particle contamination.

Methodologies for rinsing tool surfaces in tools used to process microelectronic workpieces

A method and processing system are provided for independent temperature and hydration control for an etching solution used for treating a wafer in process chamber. The method includes circulating the etching solution in a circulation loop, maintaining the etching solution at a hydration setpoint by adding or removing water from the etching solution, maintaining the etching solution at a temperature setpoint that is below the boiling point of the etching solution in the circulation loop, and dispensing the etching solution into the process chamber for treating the wafer. In one embodiment, the dispensing includes dispensing the etching solution into a processing region proximate the wafer in the process chamber, introducing steam into an exterior region that is removed from the wafer in the process chamber, and treating the wafer with the etching solution and the steam.

Processing system and method for providing a heated etching solution

Embodiments of the invention are directed towards improving on-wafer process performance and processing at increased processing fluid/wafer temperature while maintaining good process performance. A method for processing a wafer in a process chamber is described where the process chamber includes a wafer holder having first and second sets of edge grippers for independently securing the wafer at the wafer edge during processing, treating the wafer with a first processing fluid while securing the wafer with the first set of edge grippers, but not with the second set of edge grippers, treating the wafer with a second processing fluid while securing the wafer with the first set of edge grippers, but not with the second set of edge grippers, and treating the wafer with a third processing fluid while securing the wafer with the second set of edge grippers, but not with the first set of edge grippers.

Method of using separate wafer contacts during wafer processing

A method of treating a substrate comprises, in one aspect, placing a substrate having material on a surface thereof in a treatment chamber; directing a stream of a liquid treatment composition to impinge the substrate surface; and directing a stream of water vapor to impinge the substrate surface and/or to impinge the liquid treatment composition. A preferred aspect of this invention is the removal of materials, and preferably photoresist, from a substrate, wherein the treatment composition is a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors.

Process for treatment of substrates with water vapor or steam

The present invention provides a tool for treating microelectronic workpieces with one or more treatment materials, including liquids, gases, fluidized solids, dispersions, combinations of these, and the like.

Barrier structure and nozzle device for use in tools used to process microelectronic workpieces with one or more treatment fluids

A process is provided for treating a semiconductor wafer at a target wafer temperature. This process includes the following steps: a) determining the target wafer temperature of the semiconductor wafer during a given wafer treatment process step; 

Process for treatment of semiconductor wafer using water vapor containing environment

Tool for treating microelectronic workpieces with one or more treatment materials, including liquids, gases, fluidized solids, dispersions, combinations of these, and the like. The invention provides an approach for rapid, efficient rinsing of wetted surface(s), and is particularly advantageous when used to rinse the lower surface of moveable barrier structures such as a barrier plate that overlies a workpiece being treated in such a manner to define a tapering flow channel over the workpiece. Rather than spray rinsing liquid onto the surface in a manner that generates undue splashing, droplet, or mist generation, the liquid is flowingly dispensed, preferably under laminar flow conditions, onto a surface that is in fluid communication with the surface to be rinsed. A smooth, uniform wetting and sheeting action results to accomplish rinsing with a significantly reduced risk of generating particle contamination.

Rinsing methodologies for barrier plate and venturi containment systems in tools used to process microelectronic workpieces with one or more treatment fluids, and related apparatuses

A method of treating a substrate comprises, in one aspect, placing a substrate having material on a surface thereof in a treatment chamber; directing a stream of a liquid treatment composition to impinge the substrate surface; and directing a stream of water vapor to impinge the substrate surface and/or to impinge the liquid treatment composition. A preferred aspect of this invention is the removal of materials, and preferably photoresist, from a substrate, wherein the treatment composition is a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors. In another aspect, a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors are dispensed onto a portion of the substrate surface that is less than the entire surface of the substrate in an amount effective to treat the portion of the substrate surface, and the liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor. The substrate may be enveloped with a water vapor and/or a optionally nitrogen gas environment during the treatment steps.

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Burnsville, MN, United States of America

David Dekraker