Asml Netherlands B.v.

David Deckers

Richard Johannes Franciscus Van Haren

Irina Lyulina

Scott Anderson Middlebrooks

Franciscus Godefridus Casper Bijnen

Alexander Ypma

Jochem Sebastiaan Wildenberg

Adrianus Cornelis Matheus Koopman

Jasper Menger

David Han

Sami Musa

Hubertus Johannes Gertrudus Simons

Marcus Adrianus Van De Kerkhof

Everhardus Cornelis Mos

Thomas Theeuwes

Remi Daniel Marie Edart

Xiuhong Wei

Nicole Schoumans

Kyu Kab Rhe

Sam Musa

In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in the multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.

Methods and apparatus for obtaining diagnostic information relating to an industrial process

In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in said multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.

A pattern formed on a substrate includes first and second sub-patterns positioned adjacent one another and having respective first and second periodicities. The pattern is observed to obtain a combined signal which includes a beat component having a third periodicity at a frequency lower than that of the first and second periodicities. A measurement of performance of the lithographic process is determined by reference to a phase of the beat component. Depending how the sub-patterns are formed, the performance parameter might be critical dimension (CD) or overlay, for example. For CD measurement, one of the sub-patterns may comprise marks each having of a portion sub-divided by product-like features. The measurement can be made using an existing alignment sensor of a lithographic apparatus. Sensitivity and accuracy of the measurement can be adjusted by selection of the first and second periodicities, and hence the third periodicity.

Measuring method, apparatus and substrate

A method of correcting an image characteristic of a substrate onto which one or more product features have been formed using a lithographic process, and an associated inspection apparatus method. The method includes measuring an error in the image characteristic of the substrate, and determining a correction for a subsequent formation of the product features based upon the measured error and a characteristic of one or more of the product feature(s).

Inspection method and apparatus, and lithographic apparatus

An alignment measurement system measures an alignment target on an object. A measurement illuminates the target and is reflected. The reflected measurement beam is split and its parts are differently polarized. A detector receives the reflected measurement beam. A processing unit determines alignment on the basis of the measurement beam received by the detector. An alternative arrangement utilizes an optical dispersive fiber to guide a multi-wavelength measurement beam reflected from the object to a detector.

Alignment measurement system, lithographic apparatus, and a method to determine alignment of in a lithographic apparatus

Alignment measurement system, lithographic apparatus, and a method to determine alignment in a lithographic apparatus

An alignment mark determines alignment of a first and a second exposure on a substrate on a macro level and a micro level. The alignment mark includes a first alignment pattern projected during the first exposure and a second alignment pattern projected during the second exposure. The alignment mark includes a first sub-mark at least partially defined by the first alignment pattern and a second sub-mark at least partially defined by the second alignment pattern. Relative positions of the first and second sub-marks on the substrate are representative for alignment of the first and second exposures on the macro level. At least one sub-mark is defined by image lines of the first alignment pattern and the second alignment pattern, and wherein relative positions of image lines of the first alignment pattern and image lines of the second alignment pattern of the at least one sub-mark are representative for alignment of the first and second exposures on the micro level.

Alignment mark, substrate, set of patterning devices, and device manufacturing method

A method is used to estimate a value representative for a level of alignment mark deformation on a processed substrate using an alignment system. The alignment sensor system is able to emit light at different measuring frequencies to reflect from an alignment mark on the substrate and to detect a diffraction pattern in the reflected light in order to measure an alignment position of the alignment mark. The two or more measuring frequencies are used to measure an alignment position deviation per alignment mark associated with each of the two or more measuring frequencies relative to an expected predetermined alignment position of the alignment mark. A value is determined representative for the spread in the determined alignment position deviations per alignment mark in order to estimate the level of alignment mark deformation.

Alignment mark deformation estimating method, substrate position predicting method, alignment system and lithographic apparatus

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Veldhoven, Netherlands

David Deckers