Ipdia

Nxp B.v.

David D R Chevrie

Johan Hendrik Klootwijk

Freddy Roozeboom

Pascal Philippe

Francois Neuilly

Lionel Guiraud

Marc Sworowski

Dominique Yon

Francois Lecornec

The invention relates to an electric device including an electric element, the electric element comprising a first electrode () having a first surface () and a pillar (), the pillar extending from the first surface in a first direction (), the pillar having a length measured from the first surface parallel to the first direction, the pillar having a cross section () perpendicular to the first direction and the pillar having a sidewall surface () enclosing the pillar and extending in the first direction, characterized in&#x2014;that, the pillar comprises any one of a score () and protrusion () extending along at least part of the length of the pillar for giving the pillar () improved mechanical stability. The electrode allows electrical elements such as capacitors, energy storage devices or diodes to be made with improved properties in a cost effective way.

Electronic device having electrode with high area density and improved mechanical stability

Method of manufacturing a MEMS device integrated in a silicon substrate. In parallel to the manufacturing of the MEMS device passive components as trench capacitors with a high capacitance density can be processed. The method is especially suited for MEMS resonators with resonance frequencies in the range of 10 MHz.

Integrated single-crystal MEMS device

The present invention provides a method for making a vertical interconnect through a substrate. The method makes use of a sacrificial buried layerarranged in between the first sideand the second sideof a substrate. After having etched trenchesand' from the first side, the sacrificial buried layerfunctions as a stop layer during etching of holesand&#x2032; from the second side, therewith protecting the trenches from damage during overetch of the holes. The etching of trenches is completely decoupled from etching of the holes providing several advantages for process choice and device manufacture. After removing part of the sacrificial buried layer to interconnect the trenches and the holes, the resulting vertical interconnect hole is filled to form a vertical interconnect.

Electronic device and method for making the same

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Bretteville sur Odon, France

David D R Chevrie