Varian Semiconductor Equipment Associates, Inc.

David Cox

Jonathan Gerald England

Patrick M Martin

Techniques for forming a three dimensional (3D) feature on a substrate are disclosed. In one exemplary embodiment, the technique may be realized as a method comprising: forming a resist structure on the substrate, the resist structure having a first resist portion with a first thickness, a second resist portion with a second thickness, and a third resist portion with a third thickness, where the first thickness may be less than the second thickness, and where the second thickness may be less than the third thickness; implanting charged particles into the substrate through the first and second resist portions and forming an implanted region in the substrate; and etching the substrate to form the 3D feature on the substrate.

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Guildford, United Kingdom

David Cox