Toyko Electron Limited

David Conklin

Michael Murphy

Charlotte Cutler

In certain embodiments, a method includes forming, by photolithography on a semiconductor wafer, first patterned features (PFs) including first photoresist structures (PRSs) having a first width and first recesses having a second width less than the first width and greater than a target width; forming, via anti-spacer patterning processing, second PFs including second PRSs having a third width less than the first width, first overcoat structures (OCSs) of the second width interspersed between second PRSs, and second recesses having a fourth width less than the target width; and forming, via acid diffusion processing, third PFs including third PRSs having a fifth width, second OCSs of the target width interspersed between third PRSs, and third recesses defined by third PRSs and second OCSs and having a sixth width greater than the fourth width, portions of first OCSs having been selectively removed using the acid diffusion processing to form second OCSs.

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Saratoga Springs, NY, United States of America

David Conklin