Applied Materials, Inc.

David Chu

Mei Yin Chang

Joseph Yudovsky

Paul F Ma

Dien-Yeh Wu

Chien-Teh Kao

Faruk Gungor

Johanes F Swenberg

Hyman Lam

Wei Liu

Matthew S Rogers

Christopher Sean Olsen

Patricia M Liu

Theresa Kramer Guarini

Malcolm J Bevan

Tatsuya E Sato

Steven C Hung

Hyman W H Lam

Udayan Ganguly

Yonah Cho

Heng Pan

Lucien Date

Shih-Chung Chen

Malcom J Bevan

Johanes Swenburg

Charles Chu

Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectable with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

Apparatus and method for providing uniform flow of gas

Processing methods may be performed to produce semiconductor structures that may include a high-k dielectric material. The methods may include delivering a nitrogen-containing precursor or an oxygen-containing precursor to a substrate contained in a semiconductor processing chamber. The methods may include forming reactive ligands on an exposed surface of the substrate with the nitrogen-containing precursor or the oxygen-containing precursor. The methods may also include forming a high-k dielectric material overlying the substrate.

Treatments to enhance material structures

Disclosed are apparatus and methods for processing a substrate. The substrate having a feature with a layer thereon is exposed to an inductively coupled plasma which forms a substantially conformal layer.

Method for conformal treatment of dielectric films using inductively coupled plasma

Embodiments described herein generally relate to flash memory devices and methods for manufacturing flash memory devices. In one embodiment, a method for selective removal of nitrogen from the nitrided areas of a substrate is provided. The method comprises positioning a substrate comprising a material layer disposed adjacent to an oxide containing layer in a processing chamber, exposing the substrate to a nitridation process to incorporate nitrogen onto the material layer and the exposed areas of the oxide containing layer, and exposing the nitrided material layer and the nitrided areas of the oxide containing layer to a gas mixture comprising a quantity of a hydrogen containing gas and a quantity of an oxygen containing gas to selectively remove nitrogen from the nitrided areas of the oxide containing layer relative to the nitrided material layer using a radical oxidation process.

Enhancing NAND flash floating gate performance

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Campbell, CA, United States of America

David Chu