Merck Patent Gmbh

Infineon Technologies Ag

Promerus, Lcc

Qimonda Ag

David Christoph Müller

Klaus Meerholz

Larry Funderburk Rhodes

Andrew Bell

Aurélie Ludemann

Edmund Elce

Pramod Kandanarachchi

Hendra Ng

Kazuyoshi Fujita

Toby Cull

Steven J Smith

Hubert Spreitzer

Heinrich Becker

Jan Otterstedt

Susanne Heun

Pawel Miskiewicz

Oskar Nuyken

Frank Meyer

René Peter Scheurich

Miguel Carrasco-Orozco

Reinhard Strey

Piotr Wierzchowiec

Jürgen Steiger

Michael Bayerl

Aurélie Falcou

Thomas Braig

Volkmar Rebmann

Nina Riegel

Florian Bielefeldt

Markus Gross

Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as gate insulator layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin gate insulator and processes for preparing such polycycloolefin gate insulator layers and electronic devices encompassing such layers.

Gate insulator layer for organic electronic devices

Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as interlayers applied to fluoropolymer layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin interlayers and processes for preparing such polycycloolefin interlayers and electronic devices.

Interlayer for electronic devices

An electronic device includes a non-volatile memory having a plurality of memory cells, a memory controller, and an evaluator. The memory controller is configured to provide control signals to the non-volatile memory causing the non-volatile memory, or a selected memory section of the non-volatile memory, to be in one of a read state and a weak erase state, wherein the weak erase state causes the plurality of memory cells to maintain different states depending on different physical properties of the plurality of memory cells. The evaluator is configured to read out the plurality of memory cells and to provide a readout pattern during the read state, wherein the readout pattern that is provided after a preceding weak erase state corresponds to a physically unclonable function (PUF) response of the electronic device uniquely identifying the electronic device.

Electronic device with a plurality of memory cells and with physically unclonable function

The invention relates to electronic devices whose electronic properties can surprisingly be improved to a significant degree by inserting at least one crosslinkable polymeric buffer layer, preferably a cationically crosslinkable polymeric buffer layer, between the conductive doped polymer and the organic semiconductor layer. Particularly good properties are obtained with a buffer layer in which crosslinking is thermally induced, i.e. by raising the temperature to 50 to 250&#xb0; C. Alternatively, crosslinking can be radiation-induced by adding a photoacid. Moreover, such a buffer layer can be advantageously applied by means of printing techniques, especially inkjet printing, as the ideal temperature for the thermal treatment is independent of the glass transition temperature of the material. This avoids having to rely on material that has a low molecular weight, making it possible to apply the layer by means of printing techniques. The next layer (the organic semiconductor layer) can also be applied with the aid of different printing techniques, particularly inkjet printing, because the buffer layer is rendered insoluble by the crosslinking process, thus preventing the buffer layer from solubilizing thereafter.

Electronic devices comprising an organic conductor and semiconductor as well as an intermediate buffer layer made of a crosslinked polymer

The present invention describes organic electronic devices in which at least one organic layer of low refractive index is introduced. The light output of the electronic devices is thereby improved.

Electronic devices comprising organic semiconductors

The invention provides low molecular weight or polymeric organic materials in which at least one hydrogen atom is replaced by a group of the formula (A) where R is alkyl group, alkoxyalkyl group, alkoxy group, thioalkoxy group, aryl group or alkenyl group, in each of which one or more hydrogen atoms may be replaced and one or more nonadjacent carbon atoms may be replaced.

Materials that can be structured, method for producing the same and their use

According to one embodiment a semiconductor device is provided. The device includes a first compensator to generate a first compensated signal and a first limiter to control operation of the first compensator. Furthermore, a second compensator to generate a second compensated signal and a second limiter to control operation of the second compensator is provided. An output device is adapted to receive the first compensated signal and the second compensated signal to drive an output.

Output driver

The present invention is a converter stage for converting a differential logic input signal and a corresponding common mode differential logic signal each having a first single-ended logic signal and a complementary second single-ended logic signal into a single-ended logic output signal. The converter stage comprises a first and a second differential stage each having a first and a second MOS transistor and a first and second current source for the differential stages. According to the invention the current sources are controlled by the voltage level which is centered between the mid-potentials of the common mode level differential logic signal and the mid-potential of the differential logic input signal.

Differential to single-ended logic converter

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Munich, Germany

David Christoph Müller