Merck Patent Gmbh

Promerus, Lcc

David Christoph Mueller

Pawel Miskiewicz

Toby Cull

Larry Funderburk Rhodes

Andrew Bell

Edmund Elce

Pramod Kandanarachchi

Hendra Ng

Kazuyoshi Fujita

Miguel Carrasco-Orozco

Steven J Smith

Simon Dominic Ogier

Piotr Wierzchowiec

Steven Smith

Ng Hendra

Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as interlayers applied to fluoropolymer layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin interlayers and processes for preparing such polycycloolefin interlayers and electronic devices.

Interlayer for electronic devices

Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as gate insulator layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin gate insulator and processes for preparing such polycycloolefin gate insulator layers and electronic devices encompassing such layers.

Gate insulator layer for organic electronic devices

The present invention relates to a process for preparing improved electronic devices, in particular organic field effect transistors (OFETs), with patterned insulator and organic semiconductor layers.

Process for preparing an organic electronic device

The invention relates to a process for preparing an electronic device using a protection layer, and to improved electronic devices prepared by this process, in particular organic field effect transistors (OFETs).

Process for preparing an electronic device

The invention relates to an organic electronic (OE) device, in particular a transistor, comprising an interlayer between the gate insulator and the gate electrode, to novel processes for preparing the device, and to dielectric materials for use in the interlayer.

Electronic device

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Frankfurt am Main, Germany

David Christoph Mueller