Imec Vzw

Katholieke Universiteit Leuven

Imec

Katholieke Universiteit Leuven, Ku Leuven R&d

Katholieke Universiteit Leuven, K.u. Leuven Research & Development

David Cheyns

Xavier Rottenberg

Pawel Malinowski

Barry P Rand

Paul Heremans

Yongbin Jeong

Chengxun Liu

Tim Stakenborg

Soeren Steudel

Yunlong Li

Kristof Lodewijks

Lei Zhang

Gauri Karve

Tung Huei Ke

Epimitheas Georgitzikis

Vladimir Pejovic

Benjamin Kam

Dominika Wysocka

Boshen Liang

A light sensor for spectrally resolved light detection, said light sensor comprises: an upper reflective element; a lower reflective element; a photo-sensitive element therebetween; a spacer element, configured to form the lower reflective element or arranged between the upper and the lower reflective element; wherein the elements form a stack of layers which define a resonance structure between the upper and the lower reflective element for providing a resonance of light; wherein the spacer element comprises at least two different materials, a distribution of which is different between different pixels in an array of pixels such that a resonance wavelength is different for different pixels; and wherein for a plurality of pixels, geometrical structures smaller than the resonance wavelength are defined by the at least two different materials.

Light sensor and a method for manufacturing a light sensor

A semiconductor device comprises a substrate, a first hole-transporting layer over the substrate, a first electron-transporting layer on the first hole-transporting layer, and a second hole-transporting layer over the first electron-transporting layer. At least one of the first electron-transporting layer and the second hole-transporting layer has an organic component. The device is characterized by one of the following: a metal oxide layer present on the first electron-transporting layer, wherein a second electron-transporting layer is on the metal oxide layer, wherein the second hole-transporting layer is on the second electron-transporting layer, or the second hole transporting layer has a first p-doped hole-transporting surface present on the first electron-transporting, layer and a second p-doped hole-transporting surface facing away from the first p-doped hole-transporting surface, or the first electron-transporting layer is on a top surface and on sidewalls of the first hole-transporting layer.

Contaminated interface mitigation in a semiconductor device

The present invention provides a flexible ultrasound transducer () for an ultrasound monitoring system for examining a curved object. The ultrasound transducer () comprises an integrated circuit structure () and a multi-layered structure (), said multi-layered structure () comprising an array () of ultrasound transducing elements () arranged in a first layer structure () and configured for generating ultrasonic energy propagating along a main transducer axis Z and an array () of control circuits () arranged in a second layer structure (), and wherein the array () of control circuits and the integrated circuit structure () are configured for operating the array () of ultrasound transducing elements in said first layer structure (), Further, the multi-layered structure () comprises at least one flexible layer () arranged so that the bending flexibility of the multi-layered structure () permits the ultrasound transducer () to form a continuous contact with said curved object during operation.

Flexible ultrasound array

The present disclosure relates to a method for transferring a target layer to a substrate. The method includes providing a stack by forming a first transfer layer over a first substrate, forming a second transfer layer on the first transfer layer, the second transfer layer being water-soluble, and forming the target layer on the second transfer layer, such that the stack has a top surface. The method also includes bonding the top surface of the stack to a second substrate, separating the first transfer layer from the second transfer layer, and dissolving the second transfer layer in water.

Method for transferring a layer to a substrate

The present invention provides a flexible ultrasound transducer for an ultrasound monitoring system for examining a curved object. The ultrasound transducer comprises an integrated circuit structure and a multi-layered structure, said multi-layered structure comprising an array of ultrasound transducing elements arranged in a first layer structure and configured for generating ultrasonic energy propagating along a main transducer axis Z and an array of control circuits arranged in a second layer structure, and wherein the array of control circuits and the integrated circuit structure are configured for operating the array of ultrasound transducing elements in said first layer structure, Further, the multi-layered structure comprises at least one flexible layer arranged so that the bending flexibility of the multi-layered structure permits the ultrasound transducer to form a continuous contact with said curved object during operation.

Flexible ultrasound transducer

An aspect comprising an optical sensor is disclosed. The optical sensor comprises stacked layers comprising: a window layer configured to allow the passage of photons; a sensing layer configured to generate charges upon impinging of the photons through the window layer; and a bottom electrode layer comprising at least one bottom electrode for receiving charges generated in the sensing layer. The sensing layer is sandwiched between the window layer and the bottom electrode layer. The at least one bottom electrode of the bottom electrode layer comprises conductive material with reflectivity higher than 0.7 to reflect back received photons into the sensing layer; and the at least one bottom electrode is obtained by semiconductor device fabrication techniques.

Optical sensor and thin film photodiode

Example embodiments relate to microfluidic devices for controlling pneumatic microvalves. One embodiment includes a microfluidic device for independently controlling a plurality of pneumatic microvalves. The microfluidic device is couplable to a pressure source. The microfluidic device includes a first substrate. The microfluidic device also includes a flexible membrane covering the first substrate. Additionally, the microfluidic device includes a second substrate covering the flexible membrane. Further, the microfluidic device includes one or more fluidic channels at least partially defined in the first substrate. In addition, the microfluidic device includes a pressure couplable to the pressure source and branching into a plurality of pressure channels. Still further, the microfluidic device includes at least one pressure control switch per pressure channel.

Microfluidic device for controlling pneumatic microvalves

A method of patterning organic semiconductor layers is disclosed. In one aspect, a method for forming a patterned organic semiconductor layer on a substrate includes providing a plurality of first electrodes on a substrate. The method additionally includes providing a patterned self-assembling monolayer at predetermined locations on each of the plurality of first electrodes. The method further includes providing a layer comprising an organic semiconductor material over the patterned self-assembling monolayer. A corresponding device and a photovoltaic module comprising such a device are also disclosed.

Patterned organic semiconductor layers

An organic optoelectronic device and a method for manufacturing the same are disclosed. In one aspect, the device has a stack of layers. The stack includes a buffer layer and a first organic semiconductor layer adjacent to the buffer layer at a first side of the buffer layer. The buffer layer includes at least one transition metal oxide doped with a metal.

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Mechelen, Belgium

David Cheyns