Ii-vi Delaware, Inc.

Iqe Plc

Ii-vi Optoelectronic Devices, Inc.

David Cheskis

Michael S Lebby

Andrew C Clark

Rodney Pelzel

Drew Nelson

Rich Hammond

Embodiments described herein provide a layered structure that comprises a substrate that includes a first porous multilayer of a first porosity, an active quantum well capping layer epitaxially grown over the first porous multilayer, and a second porous multilayer of the first porosity over the active quantum well capping layer, where the second porous multilayer aligns with the first porous multilayer.

Porous distributed Bragg reflectors for laser applications

A VCSEL is described that provides for emission from the substrate side. The VCSEL comprises a substrate having first and second major surfaces, a first distributed Bragg reflector (DBR) on the first major surface of the substrate, an active region on the first DBR, and a second DBR on the active region. These elements are aligned on a longitudinal axis along which laser radiation is emitted. In an illustrative embodiment of the invention, an open region extends through the substrate along the longitudinal axis between the second major surface of the substrate and the first DBR. An anti-reflection coating and a first ohmic contact are located on the first DBR in this region. Preferably the first ohmic contact extends around all or part of the anti-reflection coating. A second ohmic contact is located on the surface of the second DBR. The two DBRs form a laser cavity; and emission takes place along the longitudinal axis through the anti-reflection coating. A method for forming the VCSEL is also described.

VCSEL with emission on substrate side

In an illustrative embodiment, a VCSEL comprises a substrate, a first DBR on a first major surface of the substrate, an active region on the first DBR, a second DBR on the active region, and electrically conductive vias that pass through the substrate and provide ohmic contact with the DBRs so that electrical connections to both DBRs are available on the substrate side of the VCSEL. The VCSEL is formed by forming a first DBR on a first major surface of a substrate, forming an active region on the first DBR, forming a second DBR on the active region, thinning the substrate, making a first via hole through the substrate to the first DBR, making a second via hole through the substrate and the first DBR, filling the first via hole with an electrically conducting material to contact the first DBR, filling the second via hole with an electrically conducting material, and coupling the second via hole to the second DBR.

VCSEL with at least one through substrate via

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Belle Mead, NJ, United States of America

David Cheskis