Silicon Light Machines Corporation

Candescent Technologies Corporation

David Caudillo

Gabriel C Risk

Gregory David Miller

Janos J Lazar

Ludwig Galambos

Ronald O Miles

Gisele L Foulon

Alexei L Alexandrovski

Joseph M McRae

Kishore K Chakravorty

Philip J Elizondo

In one embodiment, a ferroelectric material is processed by placing the material in an environment including metal vapor and heating the material to a temperature below the Curie temperature of the material. This allows the bulk conductivity of the ferroelectric material to be increased without substantially degrading its ferroelectric domain properties. In one embodiment, the ferroelectric material comprises lithium tantalate and the metal vapor comprises zinc.

Method for increasing bulk conductivity of a ferroelectric material such as lithium tantalate

Method and apparatus for increasing bulk conductivity of a ferroelectric material

A method for uniformly depositing of polymer particles onto the surface of a gate metal during the formation of a gate electrode. In one embodiment, the present invention comprises immersing a substrate having a layer of a gate metal disposed over the surface thereof in a fluid bath containing polymer particles. In this embodiment, the fluid bath is contained within a fluid bath tank. Additionally, in the present embodiment, the layer of the gate metal disposed over the substrate has a thickness approximately the same as a desired thickness of the gate electrode to be formed. Next, the present embodiment applies a uniform potential across the surface of the layer of gate metal such that the polymer particles are uniformly deposited onto the layer of the gate metal. In so doing, the present embodiment uniformly deposits the polymer particles onto the layer of the gate metal. In the present embodiment, the polymer particles adhere to the surface of the layer of the gate metal via Van der Waal's forces and/or via a charge difference between the layer of the gate metal and each of the polymer particles. In this embodiment, the polymer particles are deposited over the surface of the layer of the gate metal with a spatial density of approximately 1.times.108 to 1.times.10.sup.12 particles per square centimeter. The present embodiment then removes the substrate having the layer of the gate metal and the particles deposited thereon from the fluid bath.

Spatially uniform deposition of polymer particles during gate electrode

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Saratoga, CA, United States of America

David Caudillo