M31 Technology Corporation

David C Yu

Nan-Chun Lien

A SRAM module and a writing control method of the SRAM module are disclosed. The writing control method of the SRAM module is applied to a SRAM module that includes a plurality of memory cells and a bit line. The method includes: providing a first voltage as a supply voltage of the plurality of memory cells during a data retention time; decreasing a first voltage level corresponding to the data retention time of the memory cells to a second voltage level by discharging the memory cells; and performing a write process to the memory cells through the bit line. The discharge time from the first voltage level to the second voltage level is related to the number of the memory cells.

SRAM module and writing control method thereof

The present invention discloses a random access memory and the memory access method thereof capable of avoiding read disturbance and increasing reading speed. An embodiment of the said random access memory comprises: a word line; a word line driving unit, coupled to the word line, operable to receive an access control signal to generate a word line enablement voltage; a voltage adjusting unit including a switch and a capacitor in which the switch is coupled to the word line and operable to receive a control signal to determine a conduction state of the switch itself and the capacitor is coupled to the switch and operable to adjust a voltage level of the word line enablement voltage according to the conduction state; and a memory unit, coupled to the word line, operable to be enabled according to the word line enablement voltage.

Growing community of inventors

Taoyuan County, Taiwan

David C Yu