Qinetiq Limited

David C W Herbert

Edward T R Chidley

John M Heaton

David R Wight

David John Robbins

Roger Timothy Carline

Weng Y Leong

A horizontal access semiconductor photo detector () comprises a horizontal light absorbing layer () for converting light into photo-current which layer is configured to confine light within it in whispering gallery modes of propagation. The detector is configured to have a first waveguide portion () and a second light confining portion () arranged such that the waveguide portion couples light into the detector and transfers light into the light confining portion so as to excite whispering gallery modes of propagation around the light confining portion. The light absorbing layer may be part of the light confining portion or alternatively light can be coupled into the light confining portion or alternatively light can be coupled into the light absorbing layer from the light confining portion by evanescent coupling. The excitation of whispering gallery modes within the light absorbing layer significantly increases the effective absorption coefficient of the light absorbing layer.

Horizontal access semiconductor photo detector

The present invention provides an avalanche photo-diode detector arrangement comprising two avalanche photo-iodes, which are each reverse biased to just below their breakdown voltage, are arranged back-to-back and are arranged in series with an oscillating voltage source such that the photodiodes exceed their breakdown voltage out of phase with each other. The oscillating voltage has a period of at least twice and preferably between 4 and 32 times, the avalanche zone transit time of the photo diodes. The detector arrangement achieves low noise and is able to distinguish dark counts.

Avalanche photo-diodes

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Worcs, United Kingdom

David C W Herbert